A compact temperature sensor for a 1.0 μm CMOS technology using lateral p-n-p transistors

Montane, E.; Bota, S.A.; Samitier, J.

doi:10.1016/s0026-2692(97)00067-0

Cited by 8 publications

(3 citation statements)

References 7 publications

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“…The part of the sensor system that has been integrated in standard 1.2µm CMOS technology consists of a temperature sensor element and a first order Σ∆-modulator. The temperature sensor consists of lateral PNP-bipolar transistors with different emitter areas [2] (figure 4). The difference of the base-emitter-voltage of these transistors is used as a linear temperature-dependent voltage and is converted by the Σ∆−modulators into a pulse density binary stream.…”

Section: System Realizationmentioning

confidence: 99%

Detection of defective sensor elements using /spl Sigma//spl Delta/-modulation and a matched filter

Weiler

Machul²,

Hammerschmidt³

et al. 2000

Proceedings Design, Automation and Test in Europe Conference and Exhibition 2000 (Cat. No. PR00537)

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We present an integrable solution for detection of defective sensor elements using sigma-delta-(Σ∆)-modulation and a matched filter. The sensor element is stimulated using a pseudo random binary sequence (PRBS). The sensor signal is read out and the analog output is digitized using a Σ∆-modulator. The binary pulse density stream of the Σ∆-modulator is the output of the sensor system and thus should ideally contains the PRBS. A matched filter has the task of detecting the pseudo random sequence in the pulse density stream and its sampled output is compared to a threshold thus making it possible to judge the functionality of the sensor element. By evaluating the magnitude of the matched filter output it is also possible to measure the sensor sensitivity. We present a discrete solution of this method, but an integrated chip using a standard 1.2µm CMOS-process has been designed and is being fabricated.

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Section: System Realizationmentioning

confidence: 99%

Detection of defective sensor elements using /spl Sigma//spl Delta/-modulation and a matched filter

Weiler

Machul²,

Hammerschmidt³

et al. 2000

Proceedings Design, Automation and Test in Europe Conference and Exhibition 2000 (Cat. No. PR00537)

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“…These are usually PTAT sensors. A compact temperature sensor is fabricated using lateral pnps in a standard 1 µm n-well CMOS process [24]. The sensor uses only 0.018 mm 2 silicon area, the power consumption is 750 µW.…”

Section: Mos Transistorsmentioning

confidence: 99%

Thermal Monitoring of Self-Checking Systems

Székely¹,

Rencz²,

Karam³

et al. 1998

On-Line Testing for VLSI

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With the increasing power density in integrated systems resulting from scaling down, the occurrence of field failures due to overheating has considerably increased. Faulty operation can be prevented by on-line temperature monitoring. This paper deals with questions of on-line temperature monitoring in safety-critical systems. First the possible temperature sensors are reviewed and basic principles of self-checking systems including such sensors are detailed, then a new temperature sensor cell with extremely good parameters designed especially for DfTT applications is presented. The basic questions of integrating thermal sensors into self-checking systems are also discussed.

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“…Adaptando a estrutura MOS para o controle do componente parasita, duas opções de transistores bipolares se tornam disponíveis em um processo CMOS convencional de substrato P e poço N. Exemplos de fontes de referência e sensores de temperatura implementados com transistores laterais podem ser vistos em [22][23] [24]. No entanto, é quase consenso na literatura que transistores bipolares verticais são mais indicados para a implementação destes circuitos.…”

Section: Transistores Bipolares Em Processos Cmos Convencionaisunclassified

Geração de tensão de referencia e sinal de sensoriamento termico usando transistores MOS em forte inversão

Coimbra¹,

Filho²

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Voltage references and temperature sensors are blocks extensively used in microelectronic systems. As an alternative to the use of consolidated structures that are protected by intellectual property agreements, there is a permanent demand for the development of new techniques and structures for these circuits. It can be also highlighted the growing interest for low-voltage and low-power solutions, implemented in conventional IC technologies. This work describes the development of a circuit that meets these requirements by providing a voltage reference and temperature sensing signal obtained from a suitable arrangement of MOS transistors biased in strong inversion.The operation principle of the circuit developed is based on the concept that it is possible for a stack of n MOS transistors, biased by an appropriate current, to show a voltage drop, equal to nV GS , with the same thermal variation rate as a V GS voltage produced by a single transistor. Hence, the difference between the two voltage signals is temperature independent, characterizing a voltage reference. However, the stacking of two or more transistors prevents the operation of the circuit under low voltage. This fact motivated to adapt the technique by obtaining the voltage nV GS with the aid of an array of resistors and no stacked transistors. The minimum supply voltage becomes limited only by the reference voltage itself, whose amplitude is close to a single V GS . The circuit developed also provides a voltage signal almost linearly dependent with the absolute temperature, which can be applied for thermal sensing.Prototypes corresponding to various dimensional versions of the circuit were produced to experimentally verify the principle of operation. The best performance corresponds to the generation of a voltage reference signal with 8.7ppm/ºC thermal coefficient, from -40ºC to 120ºC, under a 1V supply voltage. Although the state of the art is represented by values as low as 1ppm/ºC, at the same temperature range, the circuit's compact aspect together with the possibility to attend low-voltage and low-power requirements grants it value as contribution to this field of research and development.ix AgradecimentosÀs instituições UNICAMP, CTI e Freescale Semicondutores do Brasil.À CAPES pelo apoio financeiro.Aos amigos do laboratório, que foram também meus professores, colegas e companheiros de divertimento, e que tanto contribuíram para a realização deste trabalho.Ao meu orientador, Prof. Dr. Carlos Alberto dos Reis Filho, cujo entusiasmo e paixão pela microeletrônica me contagiaram ao ponto de eu mesmo me apaixonar pela área. Ao Prof. Rezende, pela preciosa convivência, que "dito de forma muito simples", foi como um divisor de águas.À minha família, de sangue e coração, pelo amor incondicional, sacrifício e entrega, a quem devo não apenas a possibilidade de concluir esta jornada, mas também a minha vida, minha saúde, meu futuro e minha felicidade.Às inúmeras pessoas que me ajudaram, cada um da sua maneira, a superar todas as barreiras e suportar as tribu...

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A compact temperature sensor for a 1.0 μm CMOS technology using lateral p-n-p transistors

Cited by 8 publications

References 7 publications

Detection of defective sensor elements using /spl Sigma//spl Delta/-modulation and a matched filter

Detection of defective sensor elements using /spl Sigma//spl Delta/-modulation and a matched filter

Thermal Monitoring of Self-Checking Systems

Geração de tensão de referencia e sinal de sensoriamento termico usando transistores MOS em forte inversão

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