2011
DOI: 10.1109/tmtt.2010.2091200
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A Compact Variable-Temperature Broadband Series-Resistor Calibration

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Cited by 38 publications
(19 citation statements)
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“…We then obtained the distributed capacitance and conductance per unit length for the IDC device directly from the slope. For the high frequency measurement between 100 MHz and 40 GHz, we used the multiline thru-reflect-line algorithm [25,26] to extract the capacitance and conductance per unit length as a function of frequency for the coplanar waveguide device geometry [27,28]. For the measurement between 1 kHz and 40 GHz, we used on-wafer error correction, using a custom calibration standard fabricated on a reference wafer [27].…”
Section: Experimental and Calculation Detailsmentioning
confidence: 99%
“…We then obtained the distributed capacitance and conductance per unit length for the IDC device directly from the slope. For the high frequency measurement between 100 MHz and 40 GHz, we used the multiline thru-reflect-line algorithm [25,26] to extract the capacitance and conductance per unit length as a function of frequency for the coplanar waveguide device geometry [27,28]. For the measurement between 1 kHz and 40 GHz, we used on-wafer error correction, using a custom calibration standard fabricated on a reference wafer [27].…”
Section: Experimental and Calculation Detailsmentioning
confidence: 99%
“…Figure 10(b) shows |δZ max | for the SBC procedure. It has been calculated by using the random errors on the refection coefficients and the systematic errors on the references as previously determined (see equations (19), (20) and (22)). Although the error on the SC could probably be minimized by optimizing the experimental set-up for this specific calibration, there is almost a difference of three orders of magnitude in the obtained |δZ max | between the two calibrations.…”
Section: Error On the Calibrationmentioning
confidence: 99%
“…The resistor, pad, and conductor layers were deposited by electron-beam evaporation and lifted off via a two-layer resist process [31]. First, we deposited a 1-nm Ti adhesion layer followed by 10 nm of PdAu for the resistor [32]. Next, a 10-nm Ti adhesion layer was deposited followed by 100 nm of Pd for the pads.…”
Section: Fabrication Of the Microwave-microfluidic Devicementioning
confidence: 99%