A Compact W-Band Dual-Channel Receiver Module

Tessmann, A.; Kuri, M.; Riessle, M.; Massler, H.; Zink, M.; Reinert, W.; Bronner, W.; Leuther, A.

doi:10.1109/mwsym.2006.249934

Cited by 25 publications

(7 citation statements)

References 4 publications

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“…The Wilkinson splitter was chosen because it is compact and is matched at all ports. The 100V isolation resistor is a highfrequency flip-chip resistor 7 which has an appropriately small reactance up to 50 GHz.…”

Section: B) Lo Routingmentioning

confidence: 99%

“…However, that design was not fully integrated. Other fully integrated W-band heterodyne receiver modules have been presented in the literature [5,6,7,8], but cryogenic noise data were not reported. This paper is organized as follows: the MMIC module design is presented in Section II, a description of the chipsets is given in Section II(C), the MMIC module performance is summarized in Section III, and the design and performance of the multilayer signal-routing boards are shown in Section IV along with the 4-pixel sub-array concept.…”

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confidence: 99%

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Technology developments for a large-format heterodyne MMIC array at W-band

Sieth

Church

Lau

et al. 2012

Int. J. Microw. Wireless Technol.

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We report on the development of W-band (75-110 GHz) heterodyne receiver technology for large-format astronomical arrays. The receiver system is designed to be both mass producible, so that the designs could be scaled to thousands of receiver elements, and modular. Most of the receiver functionality is integrated into compact monolithic microwave integrated circuit (MMIC) amplifier-based multichip modules. The MMIC modules include a chain of InP MMIC low-noise amplifiers, coupled-line bandpass filters, and sub-harmonic Schottky diode mixers. The receiver signals will be routed to and from the MMIC modules on a multilayer high-frequency laminate, which includes splitters, amplifiers, and frequency triplers. A prototype MMIC module has exhibited a band-averaged noise temperature of 41 K from 82 to 100 GHz and a gain of 29 dB at 15 K, which is the state-of-the-art for heterodyne multichip modules.

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Section: B) Lo Routingmentioning

confidence: 99%

mentioning

confidence: 99%

Technology developments for a large-format heterodyne MMIC array at W-band

Sieth

Church

Lau

et al. 2012

Int. J. Microw. Wireless Technol.

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“…In the past, heterodyne modules with various levels of integration have been reported at W-band [1]- [4].…”

Section: Introductionmentioning

confidence: 99%

W-band heterodyne receiver module with 27 K noise temperature

Gawande

Reeves

Cleary

et al. 2012

2012 IEEE/MTT-S International Microwave Symposium Digest

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We present noise temperature and gain measurements of a W-band heterodyne module populated with MMIC LNAs designed and fabricated using a 35 nm InP HEMT process. The module has a WR-10 waveguide input. GPPO connectors are used for the LO input and the I and Q IF outputs. The module is tested at both ambient (300 K) and cryogenic (25 K) temperatures. At 25 K physical temperature, the module has a noise temperature in the range of 27-45 K over the frequency band of 75-111 GHz. The module gain varies between 15 dB and 27 dB. The band-averaged module noise temperature of 350 K and 33 K were measured over 80-110 GHz for the physical temperature of 300 K and 25 K, respectively. The resulting cooling factor is 10.6.

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“…The metamorphic high electron mobility transistor (mHEMT) is a promising technology for high‐performance microwave circuits and systems, as it allows high gain and low noise performance at high frequencies [1]. Therefore, it has been extensively applied to develop various millimeter‐wave ICs including low noise amplifiers, mixers, and oscillators [2, 3].…”

Section: Introductionmentioning

confidence: 99%

K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors

Park¹,

Kim²,

Koh³

et al. 2012

Micro & Optical Tech Letters

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A broadband watt‐level power amplifier in a metamorphic high electron mobility transistor (mHEMT) technology is presented at K‐band. The quadruple‐stacked transistor is used to overcome the low breakdown voltage limit of mHEMTs and achieve watt‐level output powers. The fabricated power amplifier using 130‐nm mHEMTs shows an output power of 1.3 W at 18 GHz with a 3‐dB power bandwidth of 58%. To the best of our knowledge, this is the first report of watt‐level single‐chip power amplifiers in mHEMT technology. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2624–2626, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27140

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A Compact W-Band Dual-Channel Receiver Module

Cited by 25 publications

References 4 publications

Technology developments for a large-format heterodyne MMIC array at W-band

Technology developments for a large-format heterodyne MMIC array at W-band

W-band heterodyne receiver module with 27 K noise temperature

K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors

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