A compact wideband high power amplifier in GaN technology with 47% peak PAE

Abstract

This article presents a 4-6GHz power amplifier in a 0.25µm GaN integrated technology from UMS foundry. Two unit power cells are combined to increase output power. A new power combiner based on a stacked balun is presented. It has the advantage of occupying a much smaller area than a conventional one. The measured circuit exhibits a peak output power of 37 dBm together with a peak PAE of 47% at 4GHz. Index Terms-GaN. High power amplifier (HPA), power combining, vertically stacked balun.

A 39.7 dBm and 18.5% PAE compact X to Ku band GaN Travelling Wave Amplifier

“…On a previous work, we proposed an innovative solution to implement a stacked balun with the helps of air bridges. Details on the design and measurements results can be found in [7]. Based on the same topology a new balun has been designed to match frequency range.…”