A Comparative Analyze of FinFET and Bulk MOSFET SRAM Design

Wang, Weizhe

doi:10.1109/icapc57304.2022.00046

Cited by 2 publications

(1 citation statement)

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“…FinFET technology, despite its advancements, has drawbacks including complex and costly manufacturing, higher leakage currents, increased power consumption, performance variations due to fin width variability, and reliability issues. These limitations emphasize the importance of ongoing research to overcome FinFET challenges 3–5 . The Gate‐all‐around nanosheet field‐effect transistor (FET) is an innovative electronic device that has recently gained significant attention.…”

Section: Introductionmentioning

confidence: 99%

Analytical analysis and linearity performance of dual metalhigh‐KSchottky nanowireFET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

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This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface potential, subthreshold current, subthreshold swing, and drain current have been expressed and analyzed by resolving 2D Poisson's equation with suitable boundary conditions. The analog performance of the device is verified by examining cut‐off frequency (fT), trans‐conductance frequency product (TFP), gain frequency product (GFP), and gain trans‐conductance frequency product (GTFP). The results show suitable RF circuit parameters with a high switching ratio (≈3 × 109) and low subthreshold swing (61 mV/decade) for NUD‐DM‐HK‐SNWFET. Additionally, linearity frequency of merits (FOMs) and distortion performance are also studied by numerically calculating higher order voltage and current intercept point (VIP2, VIP3, IIP3, IMD3); 1‐dB compression point and Harmonics distortions (HD2 and HD3) using transconductance (gm1) along with its higher derivatives gm2 and gm3. These parameters exhibit high‐level linearity and low‐level distortion at zero crossover points in NUD‐DM‐HK‐SNWFET, making it a better contender for low‐power and high‐performance applications.

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Section: Introductionmentioning

confidence: 99%