A Comparative NBTI Study of $\hbox{HfO}_{2}$, $\hbox{HfSiO}_{x}$, and SiON p-MOSFETs Using UF-OTF $I_{\rm DLIN}$ Technique

Hot-carrier (HC) degradation becomes more critical as the channel length is reduced. Furthermore, both positive and negative bias temperature instabilities (PBTI and NBTI, respectively) are significant in high-k devices. Under HC stress, BTI caused by the vertical electric field is unavoidable. The decoupling of the BTI component from HC degradation is necessary to predict device lifetime more accurately. In this study, a new decoupling method of HC degradation is proposed. By using the relation between ΔV th and J g, the BTI component can be decoupled from the degradation under V g=V d stress. The application of our method to HfSiON metal–oxide–semiconductor field-effect transistors (MOSFETs) is demonstrated. The channel length dependence of each component shows the improvement resulting from the decoupling method. Furthermore, the activation energy of the NBTI component in HC degradation coincides with that of NBTI.

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“…Similar values have been reported. 12,13) These experimental results suggest the validity of our decoupling method.…”

Section: Decoupling Of the Nbti And Hc Components From Hc Degradationsupporting

confidence: 63%

Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-k Metal–Oxide–Semiconductor Field-Effect Transistors

Masada

Izumi

Fukatsu

et al. 2010

Jpn. J. Appl. Phys.

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“…N EGATIVE bias temperature instability (NBTI) is a crucial reliability concern for silicon oxynitride (SiON) [1] and High-k metal gate (HKMG) [2]- [5] p-MOSFETs. NBTI stress causes positive charge buildup in the gate insulator [6], and variation of device parameters such as threshold voltage ( V T ), transconductance ( g m ), and so on.…”

Section: Introductionmentioning

confidence: 99%

“…It is well known that NBTI degradation recovers after removal of stress, which has lead to the development of ultrafast measurement (UFM) techniques with microsecond (μs) delay [7], [8], to accurately determine V T due to NBTI. However, till date, UFM has been mostly used for DC NBTI characterization in SiON devices [1], [7]- [9], and except a few cases (as, e.g., in [2]), DC NBTI in HKMG devices was measured using relatively slower methods [3]- [5]. NBTI recovery results in lower V T during AC compared with DC stress [1], [6], [7], [9], and is of interest to switching logic circuits.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast AC–DC NBTI Characterization of Deep IL Scaled HKMG p-MOSFETs

Goel

Nanaware

Mahapatra

2013

IEEE Electron Device Lett.

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Ultrafast DC and AC negative bias temperature instability (NBTI) measurements are done in high-k metal gate p-MOSFETs having deeply scaled interlayer. Time evolution of degradation during and after DC and AC stress at different duty cycle and frequency are characterized. Impact of last pulse cycle duration (half or full) and pulse low bias on AC stress are studied. Equivalence of measured data from large and small area devices are shown. Experimental results are qualitatively explained using known NBTI physical mechanism.Index Terms-AC duty cycle, AC frequency, AC stress, DC stress, high-k metal gate (HKMG), negative bias temperature instability (NBTI), recovery, ultrafast measurements (UFMs).

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“…NBTI in HKMG devices is governed by the SiON IL, and the HK layer simply acts as a voltage divider [7]. It has been shown that the impact of N is very similar in SiON and HKMG devices [6]. However, it has been recently shown that the SiON [8], [9].…”

Section: Introductionmentioning

confidence: 99%

Understanding Process Impact of Hole Traps and NBTI in HKMG p-MOSFETs Using Measurements and Atomistic Simulations

Mahapatra

De²,

Joshi

et al. 2013

IEEE Electron Device Lett.

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The impact of the gate insulator process on interlayer (IL) hole traps in IL/high-K dual-layer p-MOSFET gatestack is studied by physical and electrical measurements along with atomistic simulations. Processes that lead to higher concentrations of Hf and N in IL, measured by angle-resolved Xray photoelectron spectroscopy, result in higher IL hole traps measured by flicker noise in prestress and verified by atomistic simulations. The influence of these process induced preexisting IL hole traps on parametric degradation of p-MOSFETs during Negative bias temperature instability (NBTI) stress is studied. The mechanism responsible for superior NBTI of thermal IL stack, having lower Hf and N content in the IL as compared with Chem-Ox IL stack, is explained.Index Terms-Angle-resolved X-ray photoelectron spectroscopy (ARXPS), Chem-Ox IL, DCIV, DFT simulations, flicker noise, high-k metal gate (HKMG), hole traps, Negative bias temperature instability (NBTI), thermal Interlayer (IL), trap generation, V T shift.

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A Comparative NBTI Study of $\hbox{HfO}_{2}$, $\hbox{HfSiO}_{x}$, and SiON p-MOSFETs Using UF-OTF $I_{\rm DLIN}$ Technique

Cited by 15 publications

References 18 publications

Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-k Metal–Oxide–Semiconductor Field-Effect Transistors

Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-k Metal–Oxide–Semiconductor Field-Effect Transistors

Ultrafast AC–DC NBTI Characterization of Deep IL Scaled HKMG p-MOSFETs

Understanding Process Impact of Hole Traps and NBTI in HKMG p-MOSFETs Using Measurements and Atomistic Simulations

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