2014
DOI: 10.1109/tpel.2013.2282658
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A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter

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Cited by 77 publications
(31 citation statements)
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“…Hence, the output current amplitudes are (12) If T << τ the amplitude of the output current (9) is proportional to T on /T, thus, the output power is given by (13) If T >> τ output voltage and current becomes discontinuous waveforms and the output power can be written as (14) If output power is larger than 25 %, the parameters V max and P max , defined for T on =T, and V min , for T on =0 are given by (15) Therefore the output power value must be inside of the limits calculated in (13) and (14) ( 16) In the other case, when output power is less than 25 % V max and V min are given by (17) and the inverter output power is in the range of (18) Fig. 8 shows the graphic representation of equations (16), in the right traces, and (18) in the left traces. Dashed lines represent the limits corresponding to low values of τ and solid lines are valid when τ tends to infinity.…”
Section: System Configurationmentioning
confidence: 99%
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“…Hence, the output current amplitudes are (12) If T << τ the amplitude of the output current (9) is proportional to T on /T, thus, the output power is given by (13) If T >> τ output voltage and current becomes discontinuous waveforms and the output power can be written as (14) If output power is larger than 25 %, the parameters V max and P max , defined for T on =T, and V min , for T on =0 are given by (15) Therefore the output power value must be inside of the limits calculated in (13) and (14) ( 16) In the other case, when output power is less than 25 % V max and V min are given by (17) and the inverter output power is in the range of (18) Fig. 8 shows the graphic representation of equations (16), in the right traces, and (18) in the left traces. Dashed lines represent the limits corresponding to low values of τ and solid lines are valid when τ tends to infinity.…”
Section: System Configurationmentioning
confidence: 99%
“…The experimentally measured thermal resistance from the transistors junction to the water (ambient) is R thJA = 0.05 K/W. For all power measurements a calorimetric method was used [18] [19]. Fig.…”
Section: Control Circuitmentioning
confidence: 99%
“…SiC Schottky diodes are available from several manufacturers, including Cree, IXYS, Infineon, and STMicroelectronics; SiC controllable switching devices in a variety of voltage and current levels are commercialized, such as JFETs from SemiSouth, metal-oxide-semiconductor field-effect transistors from Cree, and BJTs from TranSiC [92], [93]. GeneSiC and Cree have also developed a series of hybrid Si-IGBT/SiC-diode copack units and modules, up to 1,200 V/11 kW [94], where the latest generation of low-loss IGBTs is paired with SiC diodes instead of traditional Si diode. At the state of the art of semiconductor manufacturing, PV market demands, and ZS/qZS-CMI-based PV systems [57]- [63], ZS/qZS-CMIs cooperating with SiC devices can be considered as a future trend in highpower PV conversion technology.…”
Section: Future Trendsmentioning
confidence: 99%
“…Among the available topologies, the series resonant full/half-bridge topology [1][2][3][4] is one of the most used topologies due to its good balance between cost, performance, and control complexity.…”
mentioning
confidence: 99%