A comparative spectroscopic study of single and dual pulse laser produced UV tin plasmas

Khalil, A. H.

doi:10.1016/j.optlastec.2012.06.011

Cited by 30 publications

(13 citation statements)

References 44 publications

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“…We measured the FWHM that was extracted using Lorentzian fitting for the profile of selected lines, while Stark broadening parameters were obtained from the literature. 35,36 The electron number density of the H a -selected neutral iron, Fe(I), neutral tin, Sn(I), and singly ionized tin, Sn(II), lines are arranged in Table 1.…”

Section: Diagnostics Of Laser-ablated Plasmamentioning

confidence: 99%

EXPRESS: Calibration-Free Laser-Induced Plasma Analysis of Nanoparticle-Doped Material Using Self-Absorption Correction Methodologies

Farooq

Ali

et al. 2018

Appl Spectrosc

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The qualitative and quantitative analysis of doped nanomaterial containing iron (Fe) and tin (Sn) nanoparticles was investigated using laser-induced breakdown spectroscopy (LIBS). Doped nanoparticles were prepared via co-precipitation and hydrothermal processes. The emission spectra of ablated plasma of doped material revealed the existence of different species in the doped nanomaterial. Simple calibration-free LIBS (CF-LIBS) and internal reference self-absorption correction (IRSAC) CF-LIBS approaches were applied to emission spectra of nanomaterial for quantitative analysis. For both approaches, different spectroscopic parameters such as plasma temperature and electron number density were also determined. Plasma temperature was estimated using a Boltzmann plot and Saha-Boltzmann plot while electron number density was estimated by Stark broadening methods and Saha-Boltzmann equations. Results of both calibration-free approaches were compared with a weight percentage method and other recognized techniques such as laser ablation time of flight (LA-TOF) spectroscopy and energy dispersive X-ray (EDX). We concluded that our results provide good agreement with experimental data obtained using LA-TOF spectroscopy and a small deviation from data obtained using the EDX technique. The current work confirms LIBS as a valid analytical approach for quantitative analysis of nanomaterials.

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Section: Diagnostics Of Laser-ablated Plasmamentioning

confidence: 99%

EXPRESS: Calibration-Free Laser-Induced Plasma Analysis of Nanoparticle-Doped Material Using Self-Absorption Correction Methodologies

Farooq

Ali

et al. 2018

Appl Spectrosc

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“…To improve the long-distance signal, a double-pulse LIBS mode was also adopted in the system. Using double or multiple pulses separated by a short delay time (several microseconds) can produce a lower LOD and significant enhancements of emission line intensity as well as much improved signal-to-noise ratios [29][30][31][32][33][34][35]. However, to the best of our knowledge, the effect of double-or multi-pulses on steel melt has not been previously studied.…”

Section: Introductionmentioning

confidence: 99%

In situ analysis of steel melt by double-pulse laser-induced breakdown spectroscopy with a Cassegrain telescope

Sun

Cong

et al. 2015

Spectrochimica Acta Part B: Atomic Spectroscopy

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“…DP-LIBS techniques are applied in a number of important fields (nuclear energy, mining, art materials, environmental chemical pollution, thin films, nanoparticles, etc.). The collinear DP-LIBS configuration is a superior spectroscopic analytical technique as compared to the SP-LIBS configuration to understand the generation and expansion dynamics of the plasma induced by interaction of laser radiation with targets [15][16][17][18][19][20][21]. The analytical performance of the DP-LIBS technique is strongly dependent on the selection of the experimental conditions.…”

Section: Introductionmentioning

confidence: 99%

Chemical etching method assisted double-pulse LIBS for the analysis of silicon crystals

Khalil

2015

Appl. Phys. A

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Two Nd:YAG lasers working in pulsed modes are combined in the same direction (collinear arrangement) to focus on silicon (Si) crystals in reduced oxygen atmosphere (0.1 mbar) for double-pulse laser-induced breakdown spectroscopy (DP-LIBS) system. Silicon crystals of (100) and (111) orientations were investigated, and Si samples were measured either without prior treatment (''untreated'') or after fabrication of nano-pores (''treated''). Nano-pores are produced by metal coating and by chemical etching. DP-LIBS spectra were compared for different Si samples (untreated, treated, (100) and (111) orientations), for double-pulse (DP) (with 266 nm pulse followed by 1064 nm pulse) excitation and for different delay times (times between the excitation laser pulse and the detection ICCD gate); treatment by chemical etching has been studied as well. The intensity of the atomic line Si I at 288.16 nm was enhanced by a factor of about three by using the DP-LIBS signals as compared to the single-pulse (SP) signal which could increase the sensitivity of the LIBS technique. This study proved that an optimized value of the etching time of Si during etching by chemical processes and short delay times are required. Plasma parameters [the electron temperature (T e ) and the electron number density (N e )] were calculated from measured SP-and DP-LIBS spectra. The most important result of this study is the much higher DP-LIBS intensity observed on Si (100) as compared to Si (111) for measurements under the same experimental conditions. This study could provide important reference data for the design and optimization of DP-LIBS systems involved in plasma-facing components diagnostics.

show abstract

A comparative spectroscopic study of single and dual pulse laser produced UV tin plasmas

Cited by 30 publications

References 44 publications

EXPRESS: Calibration-Free Laser-Induced Plasma Analysis of Nanoparticle-Doped Material Using Self-Absorption Correction Methodologies

EXPRESS: Calibration-Free Laser-Induced Plasma Analysis of Nanoparticle-Doped Material Using Self-Absorption Correction Methodologies

In situ analysis of steel melt by double-pulse laser-induced breakdown spectroscopy with a Cassegrain telescope

Chemical etching method assisted double-pulse LIBS for the analysis of silicon crystals

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