Two-dimensional (2D) transition-metal dichalcogenides
(TMDs) are
new crystalline materials with exotic electronic, mechanical, and
optical properties. Due to their inherent exceptional mechanical strength,
these 2D materials provide us the best platform for strain engineering.
In this study, we have performed first-principles calculations to
study the effect of uniaxial strains on the electronic, magnetic,
and mechanical properties of transition-metal dichalcogenides (TMDs)
MX2 (where M = Cr, Mo, W and X = S, Se), monolayers (2D),
and armchair and zigzag nanoribbons (1D). For the mechanical strength,
we determined the tensile strength (σ) and Young’s modulus
(Y) and observed that σ and Y are higher in monolayers (most in WS2ML) as compared
to nanoribbons where monolayers resist tension up to 25–28%
strain while nanoribbons (armchair and zigzag) can be only up to 5–10%.
Deformation potential (Δ
p
) in the
linear regime near the equilibrium position(ϵ < 2%) has also
been calculated, and its effect on monolayers is observed less as
compared to nanoribbons. In addition, unstrained nonmagnetic monolayers
are direct band gap semiconductors (D) which changed to indirect band
gap semiconductors (I) with the application of strain. Ferromagnetic
states of metallic zigzag nanoribbons (including up spin channel of
7-CrS2NR and 7-CrSe2NR) are greatly affected
by strain and show half-metal-like behavior in different strain range.
The magnetic moment (μ) that is predominantly observed in zigzag
nanoribbons is 2 times higher than that of other nanoribbons. This
magnetism in nanoribbons is mostly caused by transition-metal atoms
(M = Cr, Mo, W). Thus, our study suggests that strain engineering
is the best approach to modify or control the structural, electronic,
magnetic, and mechanical properties of the TMD monolayer and nanoribbons
which, therefore, open their potential applications in spintronics,
photovoltaic cells, and tunneling field-effect transistors.