2020
DOI: 10.1016/j.ijleo.2020.164743
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A comparative study of different buffer layers for CZTS solar cell using Scaps-1D simulation program

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Cited by 69 publications
(22 citation statements)
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“…The results depict that all solar cells’ V OC and FF enhanced with increasing ZrS 2 thickness due to the reduction in recombination rate at the absorber/buffer interface and decrement in the Rs of the solar cells, respectively. [ 54 ] On the other hand, it can be seen that J SC slightly decreased for SnS, Cu 2 SnS 3 , and CuSb(S,Se) 2 solar cells. This behavior can occur due to the slight reduction in the generation of charge carriers in the absorber, resulting from small light absorption in ZrS 2 .…”
Section: Resultsmentioning
confidence: 99%
“…The results depict that all solar cells’ V OC and FF enhanced with increasing ZrS 2 thickness due to the reduction in recombination rate at the absorber/buffer interface and decrement in the Rs of the solar cells, respectively. [ 54 ] On the other hand, it can be seen that J SC slightly decreased for SnS, Cu 2 SnS 3 , and CuSb(S,Se) 2 solar cells. This behavior can occur due to the slight reduction in the generation of charge carriers in the absorber, resulting from small light absorption in ZrS 2 .…”
Section: Resultsmentioning
confidence: 99%
“…It is seen that all the parameters are stable for all the points. It is because fewer photons will reach the absorber through the thicker buffer layer [36][37][38]. Fill factor (%)…”
Section: Effect Of Variation In Absorber Layermentioning
confidence: 99%
“…FTO and Au have work functions of 4.4 eV and 5.1 eV, respectively. We used the following settings for all defect layers: At 300K, the thermal velocity of electrons and holes is 10 7 cm/s, the energy distribution is Gaussian, the characteristic energy is 0.1 eV, and the energy level relative to the reference is 0.6 eV [18]. We provided absorber/ETL and absorber/HTL interface defects with hole capture cross section of 10 -18 cm 2 and 10 -19 cm 2 , electron-capture cross section of 10 -19 cm 2 and 10 -18 cm 2 respectively, and interface defect density of 10 13 cm -3 .…”
Section: Theoretical Simulationmentioning
confidence: 99%