A Comparative Study of Different Physics-Based NBTI Models

Mahapatra, S.; Goel, Nilesh; Desai, Sunil R.; Gupta, Shashank; Jose, B.; Mukhopadhyay, Subhadeep; Joshi, K.; Jain, Ankit; Islam, Ahmad E.; Alam, Muhammad Ashraful

doi:10.1109/ted.2013.2238237

Cited by 280 publications

(166 citation statements)

References 58 publications

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“…< 3 nm) used in current industry, however, hole injection and subsequent trapping is significant and the H/H2 RD model has been revised [10,11]. In the "RD based framework" [10,11], RD process covers only the generation of interface states (ΔVIT). Two other components have been added: i) As-grown hole traps (ΔVHT), and ii) Generation of bulk traps (ΔVOT).…”

Section: Failure Of the Rd Modelsmentioning

confidence: 99%

“…Several NBTI models have been proposed, such as the two-stage model [9], reaction-diffusion (RD) based framework [10,11], the composite model [12], and the as-grown-generation (AG) model [13][14][15][16][17]. In order to verify their correctness, a common practice is to demonstrate that they can fit the test data well.…”

Section: Introductionmentioning

confidence: 99%

“…The two-stage model has been extensively and critically reviewed recently [11,18]. In this paper, we will examine the predictive capability of the RD based framework and the AG models.…”

Section: Introductionmentioning

confidence: 99%

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The as-grown-generation (AG) model: A reliable model for reliability prediction under real use conditions

Zhang

2017

2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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Abstract-Modeling the negative bias temperature instability (NBTI) can optimize circuit design. Several models have been proposed and all of them can fit test data well. These models are extracted typically by fitting short accelerated stress data. Their capability to predict NBTI aging outside the test range has not been fully demonstrated. This predictive capability for long term aging under low operation bias is what needed by circuit designers. In this work, we test the predictive capability of the well-known reaction-diffusion (RD) based framework for samples fabricated by a variety of processes. Results show that the RD model cannot make an acceptable generic prediction. The recently proposed As-grown-Generation (AG) model is then introduced. By dividing defects into two groups, as-grown and generated defects, and measuring the as-grown defects experimentally, we demonstrate that it can make reliable prediction for the same set of data where the RD model failed.

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Section: Failure Of the Rd Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The as-grown-generation (AG) model: A reliable model for reliability prediction under real use conditions

Zhang

2017

2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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“…Different models can explain the NBTI effect and match the experimental data under different measurement conditions. For example, the R-D model has been verified to be effective for a moderate to very long stress time [24]. In contrast, the T-D model is capable of predicting ultrafast measurement data more precisely; moreover, the T-D model can also capture the aging variability of the NBTI effect [21,25,26].…”

Section: Nbti-induced Transistor Agingmentioning

confidence: 99%

“…For example, NBTI increases with an increase in negative stress gate bias; therefore, the NBTI-induced ∆V th is dependent on the actual workload of the circuit. In addition, NBTI increases at an elevated temperature and shows Arrhenius T activation; NBTI recovers quickly after the stress is removed, and measured ∆V th and related parameters are sensitive to measurement delay [24]. In this paper, we will not cast our focus on NBTI's physical model but on a method to alleviate NBTI-induced performance degradation while reducing power dissipation to the greatest extent.…”

Section: Nbti-induced Transistor Agingmentioning

confidence: 99%

NBTI and Power Reduction Using an Input Vector Control and Supply Voltage Assignment Method

Sun

Yang

et al. 2017

Algorithms

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As technology scales, negative bias temperature instability (NBTI) becomes one of the primary failure mechanisms for Very Large Scale Integration (VLSI) circuits. Meanwhile, the leakage power increases dramatically as the supply/threshold voltage continues to scale down. These two issues pose severe reliability problems for complementary metal oxide semiconductor (CMOS) devices. Because both the NBTI and leakage are dependent on the input vector of the circuit, we present an input vector control (IVC) method based on a linear programming algorithm, which can co-optimize circuit aging and power dissipation simultaneously. In addition, our proposed IVC method is combined with the supply voltage assignment technique to further reduce delay degradation and leakage power. Experimental results on various circuits show the effectiveness of the proposed combination method.

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Lookup table‐based negative‐bias temperature instability effect and leakage power co‐optimization using genetic algorithm approach

Bhattacharjee

Sahu

Pradhan

2021

Circuit Theory & Apps

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SummaryAs a result of continuous scaling of transistors, negative bias temperature instability (NBTI) has become a serious reliability concern which causes the device to degrade over its lifetime. Similarly, leakage power also remains a key issue in deep submicron technologies. Both NBTI‐related delay degradation and standby time leakage power depend strongly on the circuit's input patterns. The input vector control (IVC) technique can be used for mitigating both NBTI‐related delay degradation and leakage power. However, the input vectors with the least NBTI‐induced degradation may not be the same ones with the least leakage power in any circuit; therefore, co‐optimization is needed to minimize leakage and NBTI‐induced degradation. In this paper, a genetic algorithm (GA)‐based approach is presented to co‐optimize both NBTI‐related performance degradation and also leakage power. We are also presenting a trade‐off analysis by giving different weightage to the NBTI effect and leakage power. Simulation results applied on ISCAS'85 benchmark circuits illustrate that on average our proposed technique saves up to 21.85% and 17.68% circuit performance degradation and the leakage power, respectively.

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A Comparative Study of Different Physics-Based NBTI Models

Cited by 280 publications

References 58 publications

The as-grown-generation (AG) model: A reliable model for reliability prediction under real use conditions

The as-grown-generation (AG) model: A reliable model for reliability prediction under real use conditions

NBTI and Power Reduction Using an Input Vector Control and Supply Voltage Assignment Method

Lookup table‐based negative‐bias temperature instability effect and leakage power co‐optimization using genetic algorithm approach

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