A comparative study of electron and positron penetration in silicon dioxide

Dapor, Maurizio

doi:10.1016/j.elspec.2005.12.005

Cited by 39 publications

(13 citation statements)

References 88 publications

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“…As emphasized by Tanuma, Powell, and Penn in the quoted paper, the electron stopping power is a relevant quantity in radiation dosimetry and in modeling of electron transport in matter today. In particular, the stopping power has recently been utilized in Monte Carlo simulations of electrons traveling in solid targets with the aim to model processes related to electron-probe microanalysis, Auger-electron spectroscopy, and scanning electron microscopy (for example see Refs [3][4][5][6][7][8][9]). …”

Section: Monte Carlomentioning

confidence: 99%

Monte Carlo computations of the electron backscattering coefficient for bulk targets and surface thin films

Dapor

2008

Surface & Interface Analysis

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Monte Carlo computations of the electron backscattering coefficient as a function of the primary energy in the range 500 eV-5 keV for several bulk targets (Al, Si, Cr, Ni, Cu, Ge, Au) are provided. Monte Carlo simulated backscattering coefficients from several surface thin layers are also provided as a function of the electron primary energy and film thicknesses. While the elastic scattering cross-sections have been calculated by the relativistic partial wave expansion method, the stopping power data utilized by the Monte Carlo code are taken from the literature.

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Section: Monte Carlomentioning

confidence: 99%

Monte Carlo computations of the electron backscattering coefficient for bulk targets and surface thin films

Dapor

2008

Surface & Interface Analysis

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“…The transport of low-energy to intermediate-energy electrons in matter is very important in many fields like electron microscopy, surface electron spectroscopy, electron microlithography, electron probe microanalysis radiation dosimetry, design and characterisation [1][2][3][4][5][6]. Many investigations were carried out using Monte Carlo simulation of electron transport in solids [4,7,8].…”

Section: Introductionmentioning

confidence: 99%

Improved expression for calculating electron transport cross sections

2009

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“…Computational methods for examining positron experiments have matured and are reported in the literature [9][10][11]. In fact, Monte Carlo simulations can be used to investigate the positron slowingdown process in solid targets [12][13][14][15]. The positron affinity and positron deformation potential are useful parameters for positron penetration in semiconducting materials.…”

Section: Introductionmentioning

confidence: 99%

Positron Affinity, Deformation Potential and Diffusion Constant in Al x In1−x Sb Ternary Semiconductor Alloys

Fares

Bouarissa

2016

Acta Metall. Sin. (Engl. Lett.)

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The present investigation deals with the positron behaviour in Al x In 1-x Sb ternary semiconductor alloys in the zinc-blende phase. The calculations are mainly based on a pseudopotential approach coupled with the independent particle model. Features such as elastic constants, electron and positron chemical potentials, positron deformation potential and positron diffusion constant are determined. Moreover, the positron affinity to InSb, AlSb and their related ternary alloys and heterostructures is calculated. The present results are compared to experiment and found to be in reasonably good agreement. The information gathered from the present study can help in understanding the positron trapping at interfaces and precipitates and might be useful in slow-positron-beam experiments.

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A comparative study of electron and positron penetration in silicon dioxide

Cited by 39 publications

References 88 publications

Monte Carlo computations of the electron backscattering coefficient for bulk targets and surface thin films

Monte Carlo computations of the electron backscattering coefficient for bulk targets and surface thin films

Improved expression for calculating electron transport cross sections

Positron Affinity, Deformation Potential and Diffusion Constant in Al x In1−x Sb Ternary Semiconductor Alloys

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