A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes

Chen, Yiren; Zhang, Zhiwei; Miao, Guoqing; Jiang, Hong; Song, Hang

doi:10.1016/j.matlet.2021.131144

Cited by 4 publications

(5 citation statements)

References 4 publications

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“…Yiren Chen et al [ 93 ] used the MOCVD reactor to grow In 0.53 Ga 0.47 As/InP structures on a n + -InP substrate. From the HR-XRD results, two main diffraction peaks of In 0.53 Ga 0.47 As and InP were clearly observed; another gradient peak corresponds to the InGaAsP grading layer ( Figure 39 a).…”

Section: Research Progress For Ge(gesn) and Ingaas Swir Apdsmentioning

confidence: 99%

“… ( a ) HR-XRD scan and device layer structure; ( b ) double side illuminated SAGCM InGaAs/InP APDs with electric field distribution. Reproduced with permission from [ 93 ], Elsevier, 2022. …”

Section: Figurementioning

confidence: 99%

“… Electrical properties of the double side illuminated SAGCM InGaAs/InP APDs under ( a ) a full-spectrum light source and ( b ) 1550 nm illumination. Reproduced with permission from [ 93 ], Elsevier, 2022. …”

Section: Figurementioning

confidence: 99%

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Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

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Section: Research Progress For Ge(gesn) and Ingaas Swir Apdsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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“…Among various types of semiconductor optoelectronic devices, avalanche photodiodes (APDs) are characterized by the multiplication of electron-hole pairs generated by the absorption of incident photons and play important roles in a variety of applications including optical communications, three-dimensional lidar detection, and photoluminescence [7][8][9][10]. In particular, separated absorption, grading, charge, and multiplication (SAGCM)-structure InGaAs/InP APDs have attracted widespread attention because of their high sensitivity, fast response, large internal gain, and low power consumption [11][12][13][14]. However, most studies on InGaAs/InP APDs have focused on their structural design and fabrication for the purpose of performance improvement; the non-equilibrium dynamics of photogenerated carriers on the device surface have seldom been discussed.…”

Section: Introductionmentioning

confidence: 99%

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Tian,

Yang,

et al. 2024

Nanomaterials

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The spatiotemporal evolution of photogenerated charge carriers on surfaces and at interfaces of photoactive materials is an important issue for understanding fundamental physical processes in optoelectronic devices and advanced materials. Conventional optical probe-based microscopes that provide indirect information about the dynamic behavior of photogenerated carriers are inherently limited by their poor spatial resolution and large penetration depth. Herein, we develop an ultrafast scanning electron microscope (USEM) with a planar emitter. The photoelectrons per pulse in this USEM can be two orders of magnitude higher than that of a tip emitter, allowing the capture of high-resolution spatiotemporal images. We used the contrast change of the USEM to examine the dynamic nature of surface carriers in an InGaAs/InP avalanche photodiode (APD) after femtosecond laser excitation. It was observed that the photogenerated carriers showed notable longitudinal drift, lateral diffusion, and carrier recombination associated with the presence of photovoltaic potential at the surface. This work demonstrates an in situ multiphysics USEM platform with the capability to stroboscopically record carrier dynamics in space and time.

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“…InGaAs/InP APDs are mainly used in the near-infrared band, with fast response speed, small size, easy coupling with optical fibers and devices, and strong practicability. However, its disadvantage is the low absorption coefficient and detection efficiency at 1550 nm band 5,6 . In recent years, surface plasmons (SPs) have attracted many attentions for their superior optical properties [7][8][9] .…”

Section: Introductionmentioning

confidence: 99%

Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials

Chen¹,

Xie²,

Xie³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

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A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes

Cited by 4 publications

References 4 publications

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials

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