A comparative study of low energy radiation response of AlAs, GaAs and GaAs/AlAs superlattice and the damage effects on their electronic structures

Jiang, Ming; Xiao, Haiyan; Peng, Shuming; Yang, Guixia; Liu, Zi‐Jiang; Zu, Xiaotao

doi:10.1038/s41598-018-20155-0

Cited by 25 publications

(18 citation statements)

References 48 publications

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“…Gallium Arsenium (GaAs), as a direct band gap semiconductor material, shows high application value in optoelectronic devices and nuclear microwave devices due to its suitable band gap, high electron/hole mobility, and photoelectric conversion efficiency [1][2][3][4][5]. The solar cells, photodetectors, light-emitting diodes and field-effect transistors based on GaAs have been widely applied in aerospace industry.…”

Section: Introductionmentioning

confidence: 99%

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

et al. 2020

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GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap. In this study, the structural and photoelectric characteristics of Si-doped GaAs under different gamma irradiation doses (0, 0.1, 1 and 10 KGy) are investigated. Surface morphology studies show roughen of the surface with irradiation. Appearance of transverse-optical (TO) phonon mode and blueshift of TO peak reflect the presence of internal strain with irradiation. The average strain has been measured to be 0.009 by Raman spectroscopy, indicating that the irradiated zone still has a good crystallinity even at a dose of 10 KGy. Photoluminescence intensity is increased by about 60% under 10 KGy gamma irradiation due to the strain suppression of nonradiative recombination centers. Furthermore, the current of Si-doped GaAs is reduced at 3V bias with the increasing gamma dose. This study demonstrates that the Si-doped GaAs has good radiation resistance under gamma irradiation, and appropriate level of gamma irradiation can be used to enhance the luminescence property of Si-doped GaAs.

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Section: Introductionmentioning

confidence: 99%

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

et al. 2020

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“…Mitra and Stark found that the presence of vacancies enhanced the Ga/Al intermixing in GaAs/AlAs SL, resulting from the proposed two-atom ring mechanism of diffusion [ 16 ]. Recently, an AIMD simulation of radiation response of GaAs/AlAs SL has been carried out [ 17 ], in which the minimum energies for each atom to be permanently displaced from its lattice site have been determined, the pathways for defect generation have been provided, and the types of created defects have been identified. It revealed that the created Ga (or Al or As) Frenkel pair and As Ga -Ga As antisite pair have profound effects on the density of state distribution and band structure of GaAs/AlAs SL [ 17 ].…”

Section: Introductionmentioning

confidence: 99%

First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility

et al. 2018

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Advanced semiconductor superlattices play important roles in critical future high-tech applications such as aerospace, high-energy physics, gravitational wave detection, astronomy, and nuclear related areas. Under such extreme conditions like high irradiative environments, these semiconductor superlattices tend to generate various defects that ultimately may result in the failure of the devices. However, in the superlattice like GaAs/AlAs, the phase stability and impact on the device performance of point defects are still not clear up to date. The present calculations show that in GaAs/AlAs superlattice, the antisite defects are energetically more favorable than vacancy and interstitial defects. The AsX (X = Al or Ga) and XAs defects always induce metallicity of GaAs/AlAs superlattice, and GaAl and AlGa antisite defects have slight effects on the electronic structure. For GaAs/AlAs superlattice with the interstitial or vacancy defects, significant reduction of band gap or induced metallicity is found. Further calculations show that the interstitial and vacancy defects reduce the electron mobility significantly, while the antisite defects have relatively smaller influences. The results advance the understanding of the radiation damage effects of the GaAs/AlAs superlattice, which thus provide guidance for designing highly stable and durable semiconductor superlattice based electronic and optoelectronics for extreme environment applications.

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“…However, as shown in Figure 2b, except of forming the MnAs NCs in the former (Ga,Mn)As shell and the outermost GaAs shell, an excess of Mn accumulates also at the NW surface. There is no direct comparison of the diffusion coefficients of Mn in GaAs and in AlAs available in the literature, but a compilation of theoretical and experimental values of the cohesive energy given in ref 32 , clearly indicates that AlAs has a higher cohesion energy than GaAs, which may result in the lower diffusion coefficient of Mn in (Ga,Al)As in comparison to that in GaAs. 22,33 Since TEM/STEM images are the planar projections of 3D structures, it is very challenging to prepare an ultra-thin specimen cut precisely through a small NC of interest without the surrounding WZ-GaAs matrix.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Ferromagnetism in Cylindrically Confined MnAs Nanocrystals Embedded in Wurtzite GaAs Nanowire Shells

et al. 2019

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Nearly a 30% increase in the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a hexagonal to orthorhombic structural phase transition, which in bulk MnAs is combined with the magnetic one. This effect results in a remarkable shift of the magneto-structural phase transition temperature from 313 K in the bulk MnAs to above 400 K in the tensely strained MnAs nanocrystals. This finding is corroborated by the state of the art transmission electron microscopy, sensitive magnetometry, and the first-principles calculations. The effect relies on defining a nanotube geometry of molecular beam epitaxy grown core−multishell wurtzite (Ga,In)As/(Ga,Al)As/(Ga,Mn)As/GaAs nanowires, where the MnAs nanocrystals are formed during the thermal-treatment-induced phase separation of wurtzite (Ga,Mn)As into the GaAs−MnAs granular system. Such a unique combination of two types of hexagonal lattices provides a possibility of attaining quasi-hydrostatic tensile strain in MnAs (impossible otherwise), leading to the substantial ferromagnetic phase transition temperature increase in this compound.

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A comparative study of low energy radiation response of AlAs, GaAs and GaAs/AlAs superlattice and the damage effects on their electronic structures

Cited by 25 publications

References 48 publications

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility

Enhanced Ferromagnetism in Cylindrically Confined MnAs Nanocrystals Embedded in Wurtzite GaAs Nanowire Shells

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