A comparative study of molecular beam epitaxy methods

Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between the topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of MnBi 2 Te 4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in situ characterization techniques, we obtain critical insights into the nanoscale control of MnBi 2 Te 4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses and how this quantity is manifested by the dopant compensation from different antisite defects. Overall, these results establish a foundation for understanding the growth kinetics of MnBi 2 Te 4 and pave the way for future applications of MBE-grown thin films in emerging topological quantum materials.

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A comparative study of molecular beam epitaxy methods

Cited by 3 publications

References 39 publications

Growth of Quantum Confined Structures by Molecular Beam Epitaxy

Growth of Quantum Confined Structures by Molecular Beam Epitaxy

Advances in infrared linear mode avalanche photodiodes based on antimonide based semiconductors

Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi₂Te₄ Using Molecular Beam Epitaxy: Implications for Defect Control

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A comparative study of molecular beam epitaxy methods

Cited by 3 publications

References 39 publications

Growth of Quantum Confined Structures by Molecular Beam Epitaxy

Growth of Quantum Confined Structures by Molecular Beam Epitaxy

Advances in infrared linear mode avalanche photodiodes based on antimonide based semiconductors

Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi2Te4 Using Molecular Beam Epitaxy: Implications for Defect Control

Contact Info

Product

Resources

About

Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi₂Te₄ Using Molecular Beam Epitaxy: Implications for Defect Control