A Comparative Study of Short Channel Effects in 3-D FinFET with High-K Gate Di-electric

Asif, Rameez; Rehman, Saif Ur; Rehman, Ateeq Ur; Bajaj, Mohit; Choudhury, Subhashree; Dash, T. P.

doi:10.1109/apsit52773.2021.9641388

Cited by 2 publications

(1 citation statement)

References 17 publications

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“…The quest for smaller transistors centers on nanoscale technology, which drives major breakthroughs in semiconductors [1][2][3][4][5][6][7], by enabling hundreds of circuits on a chip through Very Large Scale and Ultra-Large Scale Integrations. However, reducing device dimensions generate short channel effects, (SCEs) [8][9][10][11][12][13][14] in single gate MOSFETs, which negatively influence current and cause off-state leakage. To address these challenges, FinFETs stand out as prospective electronic devices [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] due to their improved scalability and ability to control SCEs.…”

Section: Introductionmentioning

confidence: 99%

Effect of electron mobility variation on short channel effects in nanoscale double gate FinFETs: A comparative study

Shehu,

Garba Babaji,

Mutari Hajara Ali

2024

IJPR

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This work investigates the impact of electron mobility variations on short channel effects (SCEs) in different semiconductor materials using FinFETs. Using PADRE simulator, the work examines Gallium Arsenide (GaAs), Gallium Antimonide (GaSb), Gallium Nitride (GaN), and Silicon (Si) FinFETs, analyzing performance metrics such as Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS) and Threshold Voltage roll-off. The result shows that GaN-FinFET exhibits lowest subthreshold swing of 63 mV/dec at electron mobility of 10000 cm2/Vs, and threshold voltage of 0.44V at electron mobility of 10000 cm2/Vs, while Si-FinFET exhibits lowest DIBL of 3 mV/V at (4000-10000) cm2/Vs. This finding contributes to advancing the understanding of short channel effects in nanoscale FinFETs and provides valuable insights for optimizing device performance in future semiconductor technologies.

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Section: Introductionmentioning

confidence: 99%

Effect of electron mobility variation on short channel effects in nanoscale double gate FinFETs: A comparative study

Shehu,

Garba Babaji,

Mutari Hajara Ali

2024

IJPR

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Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

Chao

Lan

Fan³

et al. 2022

Micromachines

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The decoupled-plasma nitridation treatment process is an effective recipe for repairing the trap issues when depositing high-k gate dielectric. Because of this effect, electrical performance is not only increased with the relative dielectric constant, but there is also a reduction in gate leakage. In the past, the effect of nitridation treatment on channel-length was revealed, but a channel-width effect with that treatment was not found. Sensing the different nano-node channel-width n-channel MOSFETs, the electrical characteristics of these test devices with nitridation treatments were studied and the relationship among them was analyzed. Based on measurement of the VT, SS, Gm, ION, and IOFF values of the tested devices, the electrical performance of them related to process treatment is improved, including the roll-off effect of channel-width devices. On the whole, the lower thermal budget in nitridation treatment shows better electrical performance for the tested channel-width devices.

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A Comparative Study of Short Channel Effects in 3-D FinFET with High-K Gate Di-electric

Cited by 2 publications

References 17 publications

Effect of electron mobility variation on short channel effects in nanoscale double gate FinFETs: A comparative study

Effect of electron mobility variation on short channel effects in nanoscale double gate FinFETs: A comparative study

Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

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