A comparative study of silicon surface passivation using ethanolic iodine and bromine solutions

Batra, Neha; Vandana, .; Kumar, Sonu; Sharma, Manjari; Srivastava, Sanjay K.; Sharma, Pooja; Singh, Prashant

doi:10.1016/j.solmat.2011.04.028

Cited by 41 publications

(27 citation statements)

References 7 publications

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“…the value obtained by Sinton lifetime tester if the injection levels are taken in consideration (Table-1). Similar observation has been made in [5]. A typical lifetime map of bare and Al 2 O 3 passivated silicon wafer is shown in Fig.…”

Section: Introductionsupporting

confidence: 83%

Silicon Surface Passivation by Al2O3 film using Atomic Layer Deposition

Singh

Vandana

Batra

et al. 2014

Physics of Semiconductor Devices

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Section: Introductionsupporting

confidence: 83%

Silicon Surface Passivation by Al2O3 film using Atomic Layer Deposition

Singh

Vandana

Batra

et al. 2014

Physics of Semiconductor Devices

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“…The first strategy is based on the reduction of the density of electronic states at the surface and the second is based on significant reduction of one type of charge (electron/hole) carrier from the surface by an internal electric field. [4][5][6][7][8][9][10] The interface defect density can be reduced by chemical route where atomic hydrogen or a halogen atom is, generally, attached with the unsaturated Si (dangling) bonds. Consequently surface is passivated 11 and this process is referred as chemical passivation.…”

Section: 2mentioning

confidence: 99%

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

et al. 2015

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The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, QF. The interface defect density (Dit) decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min).

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“…Hence, the measured t eff by the WCT-120 and the mW-PCD could be compared at the same injection levels. 31 The metal-insulator-semiconductor (MIS) structure (schematic of which is given in Fig. 1) is fabricated by depositing aluminum dots (area B0.02 cm 2 ) using an e-beam evaporation system …”

Section: Methodsmentioning

confidence: 99%

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films

Vandana

Batra

Gope

et al. 2014

Phys. Chem. Chem. Phys.

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Thermal ALD deposited Al 2 O 3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (B100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV o10 cm s À1 ). The deduced values are close to the best reported SRV obtained by the high thermal budget process (with annealing time between 10-30 min), conventionally used for improved surface passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities.Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

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A comparative study of silicon surface passivation using ethanolic iodine and bromine solutions

Cited by 41 publications

References 7 publications

Silicon Surface Passivation by Al2O3 film using Atomic Layer Deposition

Silicon Surface Passivation by Al2O3 film using Atomic Layer Deposition

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films

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