A comparative study of SiO2 deposited by PECVD and thermal method as passivation for multicrystalline silicon solar cells

Pánek, P.; Drabczyk, K.; Focsa, A.; Slaoui, A.

doi:10.1016/j.mseb.2009.03.001

Cited by 37 publications

(14 citation statements)

References 3 publications

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“…As thermally grown layers, silicon oxide (SiO 2 ) is obtained by a long-time energy-intensive high * E-mail: mezianisam@yahoo.fr temperature process (∼1000°C) [7]. Oxide/nitride (ON) structure is considered as a good structure for passivation and antireflection coatings (ARC) in solar cells [8,9]. The oxidation product nucleates and grows laterally to produce a continuous film on the surface.…”

Section: Introductionmentioning

confidence: 99%

Compositional analysis of silicon oxide/silicon nitride thin films

Meziani

Moussi

Mahiou

et al. 2016

Materials Science-Poland

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Hydrogen, amorphous silicon nitride (SiN x :H abbreviated SiN x ) films were grown on multicrystalline silicon (mc-Si) substrate by plasma enhanced chemical vapour deposition (PECVD) in parallel configuration using NH 3 /SiH 4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation) in dry oxygen ambient environment at 950°C to get oxide/nitride (ON) structure. Secondary ion mass spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES) and energy dispersive X-ray analysis (EDX) were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiN x . Indeed, oxygen diffused to the nitride layer into Si 2 O 2 N during dry oxidation.

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Section: Introductionmentioning

confidence: 99%

Compositional analysis of silicon oxide/silicon nitride thin films

Meziani

Moussi

Mahiou

et al. 2016

Materials Science-Poland

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“…Nitride and silicon oxide deposited by PECVD are used in two possible variants: SiN/SiO, SiO/SiN/SiO [5,8,9]. These dielectric structures provide good passivation on the front and the rear surface of a solar cell [9][10][11][12]. However, they do not effectively contribute to the increase of the optical confinement [5].…”

Section: Introductionmentioning

confidence: 99%

Optical properties of porous Si/PECVD SiN_X:H reflector on single crystalline Si for solar cells

Remache¹,

Nychyporuk

Guermit³

et al. 2016

Materials Science-Poland

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The improvement of optical confinement on the back crystalline silicon solar cell is one of the factors leading to its better performance. Porous silicon (PS) layer can be used as a back reflector (BR) in solar cells. In this work, single layers of porous silicon were grown by electrodeposition on a single crystalline silicon substrate. The measurement of the total reflectivity (R T ) on Si/PS surface showed a significant improvement in optical confinement compared to that measured on Si/standard Al back surface field (BSF). The internal reflectivity (R B ) extracted from total reflectivity measurements achieved 86 % for the optimized single PS layer (92 nm thick layer with 60 % porosity) in the wavelength range between 950 and 1200 nm. This improvement was estimated as more than 17 % compared to that measured on the surface of Si/BSF Al contact. To improve the stability and passivation properties of PS layer BR, silicon nitride layer (SiN x ) was deposited by PECVD on a PS layer. The maximum measured total reflectivity for PS/SiN x achieved approximately 56 % corresponding to an improved R B of up to 83 %. The PS formation process in combination with the PECVD SiN x , can be applied in the photovoltaic cell technology and offer a promising technique to produce high-efficiency and low-cost c-Si solar cells.

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“…Thin-film materials, such as silicon nitride (SiN x ) processed by plasma-enhanced chemical vapor deposition (PECVD) and silicon dioxide (SiO 2 ) by thermal method, are widely used for surface passivation on c-Si [1,2]. Nevertheless, M a n u s c r i p t the minority carrier lifetime of commercial boron-doped p-type Czochralski silicon (Cz-Si) solar cells passivated with SiO 2 or SiN x normally degrades under illumination, which is known as light-induced degradation (LID) [3,4].…”

Section: Introductionmentioning

confidence: 99%

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

Wang

Chen

Pan

et al. 2015

Applied Surface Science

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A comparative study of SiO2 deposited by PECVD and thermal method as passivation for multicrystalline silicon solar cells

Cited by 37 publications

References 3 publications

Compositional analysis of silicon oxide/silicon nitride thin films

Compositional analysis of silicon oxide/silicon nitride thin films

Optical properties of porous Si/PECVD SiN_X:H reflector on single crystalline Si for solar cells

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

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A comparative study of SiO2 deposited by PECVD and thermal method as passivation for multicrystalline silicon solar cells

Cited by 37 publications

References 3 publications

Compositional analysis of silicon oxide/silicon nitride thin films

Compositional analysis of silicon oxide/silicon nitride thin films

Optical properties of porous Si/PECVD SiNX:H reflector on single crystalline Si for solar cells

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

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Optical properties of porous Si/PECVD SiN_X:H reflector on single crystalline Si for solar cells