A Comparative Study of the Curing Effects of Local and Global Thermal Annealing on a FinFET

Park, Jun-Young; Lee, Geon‐Beom; Choi, Yang‐Kyu

doi:10.1109/jeds.2019.2937802

Cited by 5 publications

(1 citation statement)

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“…Another implementation utilizes the Joule heat inherently generated in the device by the flowing current as the heat source, such as Punch-through and GIDL currents [ 16 , 17 ]. The new methods show superior annealing selectivity and can cure the target transistor, which has experienced severe HCD [ 18 ]. This active recovery capability enables ETA to demonstrate better applicability in actual circuits [ 19 ].…”

Section: Introductionmentioning

confidence: 99%

Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique

Chang

Wang²,

Yang

et al. 2023

Nanomaterials

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In this article, an experimental study on the gate-induced drain leakage (GIDL) current repairing worst hot carrier degradation (HCD) in Si p-FinFETs is investigated with the aid of an ultra-fast measurement (UFM) technique (~30 μs). It is found that increasing GIDL bias from 3 V to 4 V achieves a 114.7% VT recovery ratio from HCD. This over-repair phenomenon of HCD by UFM GIDL is deeply discussed through oxide trap behaviors. When the applied gate-to-drain GIDL bias reaches 4 V, a significant electron trapping and interface trap generation of the fresh device with GIDL repair is observed, which greatly contributes to the approximate 114.7% over-repair VT ratio of the device under worst HCD stress (−2.0 V, 200 s). Based on the TCAD simulation results, the increase in the vertical electric field on the surface of the channel oxide layer is the direct cause of an extraordinary electron trapping effect accompanied by the over-repair phenomenon. Under a high positive electric field, a part of channel electrons is captured by oxide traps in the gate dielectric, leading to further VT recovery. Through the discharge-based multi-pulse (DMP) technique, the energy distribution of oxide traps after GIDL recovery is obtained. It is found that over-repair results in a 34% increment in oxide traps around the conduction energy band (Ec) of silicon, which corresponds to a higher stabilized VT shift under multi-cycle HCD-GIDL tests. The results provide a trap-based understanding of the transistor repairing technique, which could provide guidance for the reliable long-term operation of ICs.

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