A comparative study on CdSe synthesized at low temperature

25% Zinc doped Cadmium Telluride thin films were prepared using Stacked Elemental Layer method. The structural studies were conducted by the X-Ray technique and the results were compared with standard data which confirmed the presence of mixed phases (CdTe, ZnTe and CdZnTe) in the stack annealed at 425°C. Transmittance spectra depicted the effect of Zn on the optical properties of CdTe thin film. The calculated band gaps from the transmittance spectra were lie between 1.42 and 1.51eV. Scanning Electron Microscope images elucidated the influence of Zn on surface morphology and the grain growth for CdTe thin films.

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“…The absorption coefficient (α) was calculated from the transmittance spectra using the relation [21].…”

Section: Optical Studiesmentioning

confidence: 99%

Structural and Optical Properties of Zn Doped CdTe Thin Films by Stacked Elemental Layer Method

Shanmugan

Devarajan

Ibrahim

2011

AMR

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“…CdSe has emerged as a promising material in recent years because of its potential technological importance. It is widely preferred in fabrication of solar cells, photodetector, light emitting diodes and other opto-electronic devices owing to its high photosensitive behaviour compared to other II-VI materials (Sathyalatha et al 1989;Padmanabhasarma et al 1995). CdSe often possesses n-type conductivity in bulk as well as in thin film form (Oduor and Gould 1995).…”

Section: Introductionmentioning

confidence: 99%

Space charge limited conduction in CdSe thin films

2003

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The current (I)-voltage (V) characteristics of thermally evaporated CdSe thin films having thickness in the range 850-3000 Å and deposited within the substrate temperature of 303-573 K show nearly linear dependence at low voltage and afterwards a non-linear behaviour at higher voltage range. A detailed study of I-V curves in dark and under illumination clearly reveals the mechanism as ohmic at low voltage and that of trap limited space charge limited conduction (SCLC) at higher voltage. The transition voltage (V t) from ohmic to SCLC is found to be quite independent of ambient temperature as well as intensity of illumination. SCLC is explained on the basis of the exponential trap distribution in CdSe films. Trap depths estimated from the ln I vs 10 3 /T plots are found to be within 0⋅ ⋅60-0⋅ ⋅37 eV. Using the relevant SCLC theory, the carrier concentration, n 0 , total trap concentration, N t , and the ratio of free charge to trapped charge, θ θ, have been calculated and correlated with ambient temperature and intensity of illumination.

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Effect of substrate temperature on the optical constants of zincphthalocyanine thin films

Ramakrishnan¹

2006

Cryst. Res. Technol.

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The influence of the film thickness and substrate temperature on optical constants of the vacuum evaporated ZincPhthalocyanine (ZnPc) thin films have been reported in this paper. The direct and allowed optical band gap energy has been evaluated from the (αhυ) 2 vs. (hυ) plots. The optical constants such as extinction coefficient (k f ) and refractive index (n) have been evaluated from the transmittance values and the observed results strongly dependent on substrate temperature and film thickness. The low values of the refractive index have been observed for the films prepared at T s =200°C. The change in crystallanity and phase transformation affect the optical constants and the lower values of the optical constants will leads to the good quality of the ZnPc thin films.

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A comparative study on CdSe synthesized at low temperature

Cited by 16 publications

References 7 publications

Structural and Optical Properties of Zn Doped CdTe Thin Films by Stacked Elemental Layer Method

Structural and Optical Properties of Zn Doped CdTe Thin Films by Stacked Elemental Layer Method

Space charge limited conduction in CdSe thin films

Effect of substrate temperature on the optical constants of zincphthalocyanine thin films

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