A comparative study on lanthanide oxide thin films grown by atomic layer deposition

Päiväsaari, Jani; Putkonen, Matti; Niinistö, Lauri

doi:10.1016/j.tsf.2004.06.160

Cited by 173 publications

(118 citation statements)

References 37 publications

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“…The growth rates of the other lanthanide oxides increase gradually with temperature. 35 The growth rate of many lanthanide oxides have been reported for depositions at 300 °C 8,11 and are mostly in good agreement with our results, see Fig. 2.…”

Section: Resultssupporting

confidence: 89%

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Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb)

et al. 2013

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Ln 2 O 3 thin films with optically active f-electrons (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) have been grown on Si(100) and soda lime glass substrates by atomic layer deposition (ALD) using Ln(thd) 3 (Hthd = 2,2,6,6-tetramethyl-3,5-heptanedione) and ozone as precursors. The temperature range for depositions was 200 -400 °C. Growth rates were measured by spectroscopic ellipsometry and a region with constant growth rate (ALD window) was found for Ln = Ho and Tm. All the compounds are grown as amorphous films at low temperatures, whereas crystalline films (cubic C-Ln 2 O 3 ) are obtained above a certain temperature ranging from 300 to 250 °C for 10 Nd 2 O 3 to Yb 2 O 3 , respectively. AFM studies show that the films were smooth (rms < 1 nm) except for depositions at the highest temperatures. Refractive index was measured by spectroscopic ellipsometry and was found to depend on the deposition temperature. Optical absorption measurements show that the absorption from the f-f transitions depends strongly on the crystallinity of the material. The clear correlation between the degree of crystallinity, optical absorptions and refractive index, is discussed.

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Section: Resultssupporting

confidence: 89%

“…Among the lanthanide oxides and precursors studied in this work, Nd 9 and Er 10 have previously 30 been investigated in the temperature range 200 -450 °C, Yb 11 at 250 -400 °C, while for Sm, Eu, Dy, Ho, Tm 8 , and Tb 12 only data at 300 °C are available. The use of alternative precursors has been investigated [13][14][15][16][17][18][19][20] .…”

mentioning

confidence: 99%

Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb)

et al. 2013

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“…Ho 2 O 3 films were crystallized to the cubic phase as observed earlier using similar precursor chemistry [29] whereas TiO 2 possessed anatase structure, also similarly to that observed before, though using H 2 O, then, as the oxygen precursor [42]. The composition of these films thus became close to that of stoichiometric holmium titanate.…”

Section: 2film Structure and Morphologysupporting

confidence: 73%

“…The O 3 concentration output of the generator was ~ 100 g/m 3 . Ho 2 O 3 layers were deposited at 300 °C using the ALD process based on Ho(thd) 3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) and O 3 [27,29]. TiO 2 films were grown using an ALD process based on titanium tetra- A Sopra GES-5E variable angle spectroscopic ellipsometer was used to determine the thickness (d) and optical properties (n, k) using 'Winelli II' software.…”

Section: Methodsmentioning

confidence: 99%

Holmium and titanium oxide nanolaminates by atomic layer deposition

Kukli

Link

et al. 2014

Thin Solid Films

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(001) substrates by atomic layer deposition at 300 °C from alkoxide and -diketonate based metal precursors and ozone. Individual layer thicknesses were 2 nm for TiO 2 and 4.5 nm for Ho 2 O 3 .As-deposited films were smooth and X-ray amorphous. After annealing at 800 °C and higher temperatures the nanolaminate structure was destroyed by solid-state reaction to form Ho 2 Ti 2 O 7 . The films demonstrated diamagnetic or paramagnetic behaviour in the as-deposited state. After annealing, the films possessed net magnetic moment, allowing one to record saturation magnetization and weak coercivity.

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“…This behavior, which is absent for many other plasma ALD processes, is consistent with the tendency of Er (and other lanthanides) to react with CO 2 . 32 High impurity levels were not observed for thermal ALD Er 2 O 3 films.…”

Section: -2mentioning

confidence: 94%

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Dingemans

Clark²,

Delft

et al. 2011

Journal of Applied Physics

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Atomic layer deposition was used to deposit amorphous Er-doped Al2O3 films (0.9–6.2 at. % Er) on Si(100). The Er3+ photoluminescence (PL), Er3+ upconversion luminescence, as well as the Si PL and associated surface passivation properties of the films were studied and related to the structural change of the material during annealing. The PL signals from Er3+ and Si were strongly dependent on the annealing temperature (T = 450–1000 °C), but not directly influenced by the transition from an amorphous to a crystalline phase at T > 900 °C. For T > 650 °C, broad Er3+ PL centered at 1.54 μm (4I13/2) with a full width at half maximum of 55 nm was observed under excitation of 532 nm light. The PL signal reached a maximum for Er concentrations in the range of 2–3 at. %. Multiple photon upconversion luminescence was detected at 660 nm (4F9/2), 810 nm (4I9/2), and 980 nm (4I11/2), under excitation of 1480 nm light. The optical activation of Er3+ was related to the removal of quenching impurities, such as OH (3 at. % H present initially) as also indicated by thermal effusion experiments. In contrast to the Er3+ PL signal, the Si luminescence, and consequently the Si surface passivation, decreased for increasing annealing temperatures. This trade-off between surface passivation quality and Er3+ PL can be attributed to an opposite correlation with the decreasing hydrogen content in the films during thermal treatment.

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A comparative study on lanthanide oxide thin films grown by atomic layer deposition

Cited by 173 publications

References 37 publications

Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb)

Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb)

Holmium and titanium oxide nanolaminates by atomic layer deposition

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

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