2016 IEEE Students' Conference on Electrical, Electronics and Computer Science (SCEECS) 2016
DOI: 10.1109/sceecs.2016.7509262
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A comparative study on p- and n-channel MOSFET embedded pressure sensing structures integrated with current mirror readout circuitry

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Cited by 7 publications
(3 citation statements)
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“…In another approach, piezo-MOS sensing, that is piezoresistive effect in MOSFET, has also found a promising application in the monolithic integration of CMOS and MEMS [19][20][21]. Piezo-MOSFETs integrated with microstructures have attracted significant interest among the researchers all over the world [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36]. In particular, various types of MOSFET based pressure transducers have been studied, designed and developed.…”
Section: Introductionmentioning
confidence: 99%
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“…In another approach, piezo-MOS sensing, that is piezoresistive effect in MOSFET, has also found a promising application in the monolithic integration of CMOS and MEMS [19][20][21]. Piezo-MOSFETs integrated with microstructures have attracted significant interest among the researchers all over the world [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36]. In particular, various types of MOSFET based pressure transducers have been studied, designed and developed.…”
Section: Introductionmentioning
confidence: 99%
“…In recent past, different from previous approaches, our group had introduced the idea of using current mirror circuits for pressure sensor applications. In our previous works [33][34][35][36], design, simulation and experimental results of resistive loaded n-and p-channel MOSFET based current mirror integrated pressure sensors were presented. The pressure sensitivities of these sensors require further improvement.…”
Section: Introductionmentioning
confidence: 99%
“…The distortion in energy bands causes the variation in effective mass of charge carrier that results into the variation of its mobility and hence, its resistivity. In our earlier work, design, modeling and simulation of n-and p-channel MOSFET-based current mirror-integrated pressure transducer with lesser dimension had been designed and simulated (Kumar et al, 2016). However, the fabrication and testing results of n-channel MOSFET-based current mirrorintegrated pressure transducer had been presented (Kumar et al, 2018).…”
Section: Introductionmentioning
confidence: 99%