A Comparative Study the Calculation of the Optical Gap Energy and Urbach Energy in Undoped and Indium Doped ZnO Thin Films

Abstract

In the present paper, we investigated a new model by theoretical methods; it is based on correlation from the experimental data's which was used in the calculation the optical gap energy and Urbach energies. These data's were taken from papers previously published. The choice ZnO thin films and spray only to compare our models with the Indium doping. From obtained relations found that the experimental data and theoretical calculation are in qualitative, which were supported with the variation of solution molarities and Indium doping. We have obtained a high correlation coefficient in the estimation of the band gap energy is higher than 0.96 with compare of Urbach energy is changed from 0.84 to 0.89. The measurements by these new models have agreed with minimum relative errors, it is found in the calculations of optical band gap does not exceed 4 %, and for Urbach energy are smaller than 20 and 10 % for undoped and Indium doped ZnO films, respectively. So that the best estimation was found at the Indium doped ZnO thin with maximum enhancement of minimum errors were limited to 3.5 and 9.7 % for the band gap and the Urbach energies, respectively. The decreases in the relative errors of undoped to Indium doped films can be explained by the fewer defects and less disorder.

The calculation of the optical gap energy of ZnXO (X = Bi, Sn and Fe)

“…They are usually prepared on glass substrates for opto-electrical devices because of its low resistivity, high optical transparency, good optical gap energy, as well as excellent adhesion to substrates and chemical stability. Due to the excellent structural and optical properties of doped films, ZnO has been used in a wide variety of applications such as transparent electrodes, ferromagnetism, semiconductors, piezoelectric, optoelectronic, solar cells, spintronics and nanodevices [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. ZnO is one of the most important binary II-VI semiconductor compounds is a natural n-type electrical conductor with a direct energy wide band gap of 3.37 eV at room temperature, a large exciton binding energy (60 meV) [17,18].…”

Study of the Optical Properties and Structure Zinc Oxide Thin Films Prepared by Spin Coating Technique

“…ZnO is a very most important semiconductor material due to its applications [4]. It has a direct and wide band gap of 3.3 eV in the near-UV spectral region [5], and a large exciton binding energy (60 meV) at room temperature [6]. Its consider that the ZnO is an n type semiconducting with high density and good crystal-line quality [7], but the use of ZnO as a semiconductor in electr-onic devices due to the high transmittance and good electrical conductivity [8].…”

“…Its consider that the ZnO is an n type semiconducting with high density and good crystal-line quality [7], but the use of ZnO as a semiconductor in electr-onic devices due to the high transmittance and good electrical conductivity [8]. Therefore, ZnO thin films are promising candid-ates for applications in shortwavelength light-emitting devices, lasers, field emission devices, solar cells and sensors [4][5][6][7][8][9][10].…”