2008 IEEE International Integrated Reliability Workshop Final Report 2008
DOI: 10.1109/irws.2008.4796104
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A Comparison Between V-Ramp TDDB Techniques For Reliability Evaluation

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Cited by 11 publications
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“…In the TDDB acceleration stress experiment, we needed to apply high stress to the sample for a long time. Therefore, we used constant voltage stress (CVS) [ 18 , 19 , 20 , 21 ] on the devices to monitor the changes in parameters and used a custom test box to connect the B1500A’s cable to the devices to guarantee the stability of the test. This test selected 15 samples manufactured in the same batch consisting of the same components to test the I/O devices and Core devices on different samples.…”
Section: Methodsmentioning
confidence: 99%
“…In the TDDB acceleration stress experiment, we needed to apply high stress to the sample for a long time. Therefore, we used constant voltage stress (CVS) [ 18 , 19 , 20 , 21 ] on the devices to monitor the changes in parameters and used a custom test box to connect the B1500A’s cable to the devices to guarantee the stability of the test. This test selected 15 samples manufactured in the same batch consisting of the same components to test the I/O devices and Core devices on different samples.…”
Section: Methodsmentioning
confidence: 99%