2015 Symposium on VLSI Technology (VLSI Technology) 2015
DOI: 10.1109/vlsit.2015.7223691
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A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

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Cited by 8 publications
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“…Germanium (Ge) is a promising candidate of sub-14 nm technology for the p channel device due to its high hole mobility. 3D device structures such as Fin-FETs, nanowires [7][8][9][10][11][12] are used to strengthen the electrostatic control and improve the subthreshold properties. However, serious self-heating effects (SHE) are predictable [13][14][15][16][17][18] due to new materials and non-planar structures.…”
Section: Introductionmentioning
confidence: 99%
“…Germanium (Ge) is a promising candidate of sub-14 nm technology for the p channel device due to its high hole mobility. 3D device structures such as Fin-FETs, nanowires [7][8][9][10][11][12] are used to strengthen the electrostatic control and improve the subthreshold properties. However, serious self-heating effects (SHE) are predictable [13][14][15][16][17][18] due to new materials and non-planar structures.…”
Section: Introductionmentioning
confidence: 99%