A Comparison of Charge Carrier Dynamics in Organic and Perovskite Solar Cells

Wu, Jiaying; Cha, Hyojung; Du, Tao; Dong, Yifan; Xu, Weidong; Lin, Chieh‐Ting; Durrant, James R.

doi:10.1002/adma.202101833

Cited by 78 publications

(71 citation statements)

References 238 publications

(496 reference statements)

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“…V loss in OSCs Due to the large binding energy for Frenkel exciton, the V loss of OSCs is considered to be a large and unavoidable loss. [24] The V loss in OSCs is defined as…”

Section: The Calculation Methods Of E Bmentioning

confidence: 99%

“…where E g is the lowest optical bandgap among the donor and acceptor components and q is the elementary charge. [24] In the framework of Shockley-Queisser detailed balance model, [25,26] the overall V loss can be divided into three parts.…”

Section: The Calculation Methods Of E Bmentioning

confidence: 99%

“…Due to the large binding energy for Frenkel exciton, the V loss of OSCs is considered to be a large and unavoidable loss. [ 24 ] The V loss in OSCs is defined as

V_{loss} = \frac{E_{g}}{q} - V_{OC}

where E g is the lowest optical bandgap among the donor and acceptor components and q is the elementary charge. [ 24 ] In the framework of Shockley–Queisser detailed balance model, [ 25,26 ] the overall V loss can be divided into three parts.

V_{loss} = Δ V_{oc}^{SQ} + Δ V_{oc}^{rad} + Δ V_{oc}^{non - rad}

where

Δ V_{oc}^{SQ}

is the minimum V loss while assuming an ideal semiconductor,

Δ V_{oc}^{rad}

comes from the absorption below the optical gap in a real device, and

Δ V_{oc}^{non - rad}

is the V loss due to nonradiative recombination.…”

Section: The Relationship Between E B and V Loss In Oscsmentioning

confidence: 99%

“…[ 24 ] The V loss in OSCs is defined as

V_{loss} = \frac{E_{g}}{q} - V_{OC}

V_{loss} = Δ V_{oc}^{SQ} + Δ V_{oc}^{rad} + Δ V_{oc}^{non - rad}

where

Δ V_{oc}^{SQ}

is the minimum V loss while assuming an ideal semiconductor,

Δ V_{oc}^{rad}

comes from the absorption below the optical gap in a real device, and

Δ V_{oc}^{non - rad}

is the V loss due to nonradiative recombination. [ 25 ] The first term,

Δ V_{oc}^{SQ}

, is the detailed balance V loss limit under the given solar irradiation near the earth's surface and omnipresent blackbody radiation at room temperature.…”

Section: The Relationship Between E B and V Loss In Oscsmentioning

confidence: 99%

“…Therefore, the trade-off between V OC and J SC is often observed in OSCs. [24] Recently, it has been reported that CT states can hybridize with singlet exciton states under low energy level offset in high-efficiency NFA-based systems. [28,29] The hybridization will make the CT states electronically couple with the singlet states, which has high oscillator strength for radiative transition, and thus improves the radiative efficiency of the blend to reduce the nonradiative recombination loss.…”

Section: Relationship Between E B Ct States and V Lossmentioning

confidence: 99%

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Exciton Binding Energy of Non‐Fullerene Electron Acceptors

Zhu

Zhao

Wang

et al. 2022

Adv Energy and Sustain Res

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The past three years have witnessed the power conversion efficiency (PCE) of organic solar cells (OSCs) rocketing to over 18%, due to outstanding advantages of non‐fullerene acceptors (NFAs). However, large exciton binding energy (E b) caused by strong Coulombic force is still one of the main limiting factors for high‐performance OSCs. Thus, it is critical to reduce the E b for further enhancement of device performance. Many strategies have been developed to reduce the E b of organic materials previously. In this perspective, the calculation methods for E b and the relationship between E b and voltage loss (V loss) are discussed. Then, the effects of the properties of small‐molecule acceptors on E b from the perspectives of fused‐ring donor cores, end groups, side chains, and molecular packing are discussed. Finally, the potential directions for reducing E b and pointing out the trade‐off between E b and bandgaps/miscibility are put forward. It is hoped that this perspective could provide a new thinking of a molecular design for the breakthrough of OSCs.

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“…V loss in OSCs Due to the large binding energy for Frenkel exciton, the V loss of OSCs is considered to be a large and unavoidable loss. [24] The V loss in OSCs is defined as…”

Section: The Calculation Methods Of E Bmentioning

confidence: 99%

Section: The Calculation Methods Of E Bmentioning

confidence: 99%

“…Due to the large binding energy for Frenkel exciton, the V loss of OSCs is considered to be a large and unavoidable loss. [ 24 ] The V loss in OSCs is defined as

V_{loss} = \frac{E_{g}}{q} - V_{OC}

V_{loss} = Δ V_{oc}^{SQ} + Δ V_{oc}^{rad} + Δ V_{oc}^{non - rad}

where

Δ V_{oc}^{SQ}

is the minimum V loss while assuming an ideal semiconductor,

Δ V_{oc}^{rad}

comes from the absorption below the optical gap in a real device, and

Δ V_{oc}^{non - rad}

is the V loss due to nonradiative recombination.…”

Section: The Relationship Between E B and V Loss In Oscsmentioning

confidence: 99%

“…[ 24 ] The V loss in OSCs is defined as

V_{loss} = \frac{E_{g}}{q} - V_{OC}

V_{loss} = Δ V_{oc}^{SQ} + Δ V_{oc}^{rad} + Δ V_{oc}^{non - rad}

where

Δ V_{oc}^{SQ}

is the minimum V loss while assuming an ideal semiconductor,

Δ V_{oc}^{rad}

comes from the absorption below the optical gap in a real device, and

Δ V_{oc}^{non - rad}

is the V loss due to nonradiative recombination. [ 25 ] The first term,

Δ V_{oc}^{SQ}

, is the detailed balance V loss limit under the given solar irradiation near the earth's surface and omnipresent blackbody radiation at room temperature.…”

Section: The Relationship Between E B and V Loss In Oscsmentioning

confidence: 99%

Section: Relationship Between E B Ct States and V Lossmentioning

confidence: 99%

See 3 more Smart Citations

Exciton Binding Energy of Non‐Fullerene Electron Acceptors

Zhu

Zhao

Wang

et al. 2022

Adv Energy and Sustain Res

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show abstract

Recent Progress of Y6‐Derived Asymmetric Fused Ring Electron Acceptors

Zhang

et al. 2022

Adv Funct Materials

135

102

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Symmetric conjugated molecules can be broken through suitable synthetic strategies to construct novel asymmetric molecules, which can largely broaden the material library. In the field of organic solar cells, fused‐ring electron acceptors (FREAs) with the A‐DA'D‐A type backbone structure have attracted much attention and enabled power conversion efficiencies (PCE) exceeding 18%. Among them, Y6 is one of the most classic FREAs that can derive many symmetric and asymmetric molecules and exhibit unique optoelectronic properties. Thus, in this review, the focus is on the recent progress of Y6‐derived asymmetric FREAs containing a dipyrrolobenzothiadiazole segment, which can be classified as the following three categories: asymmetric end group, asymmetric central core and asymmetric side chain. The relationship of the molecular structure, optoelectronic properties, and device performance is discussed in detail. Finally, the future design directions and challenges faced by this kind of photovoltaic materials are given.

show abstract

Organic Planar Heterojunction Solar Cells and Photodetectors Tailored to the Exciton Diffusion Length Scale of a Non‐Fullerene Acceptor

Lee

Dong

Pacalaj

et al. 2022

Adv Funct Materials

Self Cite

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While non‐fullerene acceptors (NFAs) have recently been demonstrated to exhibit long‐range exciton diffusion, most organic photovoltaic and photodetector studies still focus on blended polymer: NFA systems. Herein, a 40 nm exciton diffusion length for IT4F excitons is determined, and it is demonstrated that sharp interface, planar heterojunction (PHJ) IT4F/PM6 devices with the IT4F layer thickness matched to this diffusion length yield optimized photovoltaic and photodetector performance. The PHJ devices yield an enhanced device open‐circuit voltage relative to bulk heterojunction (BHJ) devices, associated with suppressed bimolecular recombination losses. The PHJ architecture also results in a ≈100‐fold increase in electroluminescence (EL) quantum efficiency relative to the BHJ device, correlated with a shift from charge transfer state EL for the BHJ to IT4F exciton dominated EL for the PHJ, attributed to significant hole injection from PM6 into IT4F. Of particular note, the PHJ architecture is shown to suppress dark leakage current, resulting in 83 times higher photodetector detectivity at −2 V bias than the equivalent BHJ device.

show abstract

A Comparison of Charge Carrier Dynamics in Organic and Perovskite Solar Cells

Cited by 78 publications

References 238 publications

Exciton Binding Energy of Non‐Fullerene Electron Acceptors

Exciton Binding Energy of Non‐Fullerene Electron Acceptors

Recent Progress of Y6‐Derived Asymmetric Fused Ring Electron Acceptors

Organic Planar Heterojunction Solar Cells and Photodetectors Tailored to the Exciton Diffusion Length Scale of a Non‐Fullerene Acceptor

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