A Comparison of Continuum and Kinetic Simulations of Moderate <i>pd</i> Microplasmas Integrated With High Secondary Yield Cathodes

Verma, Abhishek Kumar; Alamatsaz, Arghavan; Venkattraman, Ayyaswamy

doi:10.1002/ppap.201600130

Cited by 6 publications

(7 citation statements)

References 35 publications

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“…These cross sections are the same as those summarized by Vahedi and Surendra [27], and represent the default cross sections used in the XPDP1 [28] code. It was shown [22] that the expressions used in XPDP1 agree closely with the cross section described in the Phelps database [29] and the BSR [30] cross sections (B-Spline R-matrix) based on quantum mechanical calculations. For a detailed comparison of cross sections for electron-argon col lisions in various databases, the reader is referred to the work of Pitchford et al [31].…”

Section: Argon Microplasma Chemistrymentioning

confidence: 64%

“…With the obvious computational advantages of using a continuum model (in comparison with a particle-based method), one of the fundamental questions that remains to be answered is regarding the accuracy of continuum models. While this topic has garnered significant attention in the low-pressure regime (particularly in the context of materials processing) [18], only few researchers [19][20][21][22] have studied this problem in the microplasma regime with the lack of an extensive study. One of the deficiencies of publications comparing continuum and kinetic simulations has been the absence of controlled comparisons where one operating parameter is fixed in both simulation techniques.…”

Section: Introductionmentioning

confidence: 99%

“…Hong et al [21] compared PIC-MCC simulations and fluid simulations for microplasmas operating at 13.56 MHz and 2.45 GHz and concluded that good agreement was observed at the higher frequency. Verma et al [22] recently reported a comparative study of continuum and kinetic simulations for a direct current argon microplasma integrated with high secondary yield cathodes and operating at pd = 1. In this regard, the primary goal of the current work is to perform an exhaustive comparison of continuum and kinetic simulations for a range of operating conditions (direct current/microwave as well as pd values) along with an emphasis on the choice of simulation input parameters (for example transport parameters and reaction rate coefficients).…”

Section: Introductionmentioning

confidence: 99%

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Benchmark continuum and kinetic simulations of argon microplasmas in the direct current and microwave regimes

Verma¹,

Alamatsaz²,

Venkattraman³

2017

J. Phys. D: Appl. Phys.

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This study presents benchmark comparisons between continuum and kinetic simulations of argon microplasmas operating in the direct current and microwave regimes. Kinetic simulations using the particle-in-cell with Monte Carlo collisions (PIC-MCC) method and continuum simulations using the full-momentum equation for both ions and electrons are performed at various operating conditions in order to study the influence of product of pressure and gap size, pd (for a given gap size), influence of gap size (for a given value of pd) and operating frequency. It is shown that using the electron energy distribution function (EEDF) predicted by zero-dimensional Boltzmann solvers (such as BOLSIG+) in continuum simulations of direct current microplasmas leads to a significant under-prediction of plasma number densities with continuum simulations based on the Maxwellian EEDF performing better particularly for higher values of pd. The discrepancy between kinetic and continuum simulations is attributed to the presence of hot electrons created as a result of secondary emission and subsequent acceleration in the sheath. On the other hand, simulations performed for argon microwave microplasmas operating at 0.5 GHz, 0.8 GHz, 2 GHz and 4 GHz demonstrated that continuum simulations performed using the rate constants from BOLSIG+ showed excellent agreement with kinetic simulations for the plasma density profiles in spite of over-predicting the voltage/power required to achieve a given plasma density.

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Section: Argon Microplasma Chemistrymentioning

confidence: 64%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Benchmark continuum and kinetic simulations of argon microplasmas in the direct current and microwave regimes

Verma¹,

Alamatsaz²,

Venkattraman³

2017

J. Phys. D: Appl. Phys.

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“…Besides, it cannot be used in a strong magnetic field or with complex boundary conditions [20]. The PIC/MCC method overcomes the disadvantages of the fluid model [21], and further introduces the effects of different factors such as the temperature [22], pressure [23] and voltage [18] to provide accurate prediction of etching in the initial stage [18,[21][22][23]. However, since the electric and magnetic field distributions on the target change with etching, the plasma discharge state changes gradually, consequently resulting in worse accuracy in the latter discharging stage [24].…”

Section: Introductionmentioning

confidence: 99%

High-precision modeling of dynamic etching in high-power magnetron sputtering

Cui¹,

Chen²,

Guo³

et al. 2022

J. Phys. D: Appl. Phys.

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Etching of the cathodes in magnetron sputtering determines the plasma discharge properties and deposition efficiency. In high-power and high-ionization discharges, etching becomes more complicated, resulting in inaccurate results if the conventional models are still used. This work aims at establishing an accurate dynamic model for high-power and high-ionization discharges by combining the cellular automata (CA) method and particle-in-cell/Monte Carlo collision (PIC/MCC) method, in which all the interactions pertaining to the etching morphology, plasma density, electric field, and magnetic field are considered. In high-power discharges such as continuous high-power magnetron sputtering (C-HPMS), strong self-sputtering and intense gas rarefaction stemming from the high temperature in the vicinity of the target influence the etching behavior. Compared to the experimental results, the morphology simulated by the dynamic etching model shows an error of only 0.8% in C-HPMS, which is much less than that obtained by the traditional test-electron Monte Carlo (MC) method (10.1%) and static PIC/MCC method (4.0%). The dynamic etching model provides more accurate results to aid the development and industrial application of high-power magnetron sputtering.

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“…Verma and colleagues (University of California Merced) compare fluid modelling, based on the full‐momentum equations, with PIC/MCC simulations for moderate pd microplasmas driven by cathodes with high secondary electron emission coefficients . The authors conclude that significant discrepancies exist between both modelling approaches, and they point out the need to calibrate fluid simulation parameters based on kinetic simulations.…”

mentioning

confidence: 99%

Special issue on numerical modelling of low‐temperature plasmas for various applications — part II: Research papers on numerical modelling for various plasma applications

Bogaerts

Alves

2017

Plasma Processes & Polymers

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We present here part II of the special issue on "Numerical Modelling of Low-temperature Plasmas for Various Applications", which was divided in two parts, with each part organized as a double issue. The first double issue contained review and tutorial papers on the various modelling approaches and closely related topics, like model verification and validation, plasma-surface interaction modelling and input data for modelling. [1] In the present double issue, we give illustrations of the different modelling approaches for various applications.Low-temperature plasmas are extensively used for microelectronic applications. The two main plasma sources used for this purpose are inductively coupled plasmas (ICP) and capacitively coupled plasmas (CCP). This special issue contains a number of papers describing these two different plasma sources. Wen and colleagues from Dalian University of Technology, University of California and University of Antwerp apply a global (i.e., volume-averaged) bulk plasma model, coupled bi-directionally with a Monte Carlo (MC)/ fluid sheath model for an ICP operating in Ar/O 2 gas mixtures. [2] The model calculates the ion energy and angular distribution functions bombarding the rf-biased electrode for different bias voltages, pressures and coil powers. Mouchtouris and Kokkoris (National Center for Scientific Research (NCSR) "Demokritos" in Attica) present a multi-scale model for a low pressure ICP in Ar, based on a reactor scale model for describing the plasma behaviour, a MC particle tracing model to calculate the ion energy and angular distributions, and a MC surface model to calculate the evolution of surface morphology during the etching of a polymeric substrate. [3] This model allows linking the operating parameters of the plasma reactor with the evolution of the surface roughness. Stratakos, Zeniou and Gogolides, also working at NCSR "Demokritos", perform a full-wave three-dimensional electromagnetic analysis in vacuum to calculate and compare the electric/magnetic field components of different helical and helicon antennas used to generate ICPs. [4] This is important to select the appropriate antenna type for a plasma source.Large scale CCPs, operating at high frequencies, are studied by Eremin, Brinkmann and Mussenbrock (Ruhr-University

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A Comparison of Continuum and Kinetic Simulations of Moderate pd Microplasmas Integrated With High Secondary Yield Cathodes

Cited by 6 publications

References 35 publications

Benchmark continuum and kinetic simulations of argon microplasmas in the direct current and microwave regimes

Benchmark continuum and kinetic simulations of argon microplasmas in the direct current and microwave regimes

High-precision modeling of dynamic etching in high-power magnetron sputtering

Special issue on numerical modelling of low‐temperature plasmas for various applications — part II: Research papers on numerical modelling for various plasma applications

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