A comparison of DLC film properties obtained by r.f. PACVD, IBAD, and enhanced pulsed-DC PACVD

Deposition of amorphous hydrogenated carbon films on steel surfaces through the enhanced asymmetrical modified bipolar pulsed-DC PECVD method

“…The PECVD techniques, using different silicon precursors, were applied for depositing a thin a-Si:H interlayer in order to increase the a-C:H coatings' adherence. Hexamethyldisiloxane (C 6 H 18 Si 2 O) [36], tetramethylsilane (Si(CH 3 ) 4 ) [37,38], and silane (SiH 4 ) [7][8][9][10][11][12]39] have been used as precursor gases for depositing the silicon interlayer. Panwar et al [40] have studied the effect of annealing on the electrical, optical, and structural properties of a-Si:H films deposited in an asymmetric R.F.…”

“…In order to overcome the low adherence of a-C:H films on steel substrates, an amorphous silicon interlayer has been deposited as an interface using plasma enhanced chemical vapor deposition (PECVD) techniques and silane as a precursor gas [7][8][9][10][11][12]. This interlayer is obtained at low temperatures by using low-energy ion implantation, and it causes a continual change in the thermal expansion coefficient and helps to reduce stress in a-C:H films.…”

Hydrogenated amorphous carbon thin films deposition by pulsed DC plasma enhanced by electrostatic confinement

“…Process parameters such as power supply voltage and total working pressure control the final hardness of the a-C:H due to the influence of the energy of ion species impinging on substrate surface where the thin film grows [33][34][35][36][37]. Indeed, a higher voltage leads to higher potential difference between anodes and cathodes, thus a higher kinetic energy of ion species is achieved at constant working pressure.…”

Influence of acetylene precursor diluted with argon on the microstructure and the mechanical and tribological properties of a-C:H films deposited via the modified pulsed-DC PECVD method

“…In order to overcome the low adherence and high residual stress of the films, an amorphous thin silicon interlayer has been deposited as an interface, using PECVD techniques and silane (SiH 4 ) as a precursor gas [16][17][18][19][20][21][22][23][24]. The interlayers are obtained at low temperatures by using low-energy ion implantation, and this causes a continual change in the thermal expansion coefficient and helps to reduce stress in the films.…”