A comparison of gamma radiation effects on bromine- and hydrazine-treated HgCdTe photodiodes

Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation

“…The R 0 didn't show a monotonic change as predicted based on the results of post irradiation measurements. 3 According to, 9 the dark current of HgCdTe photovoltaic detectors could be modeled as a combination of the diffusion current (I diff ) due to the thermal diffusion of minority carriers from the quasi-neutral regions, generation-recombination current in the depletion region (I g-r ), band-to-band tunneling current (I btb ), trap assisted tunneling current (I tat ) and ohmic current mainly related with surface leakage current (I sh ). The dynamic resistance of R diff , R g-r , R btb , R tat and R sh due to different dark current contributions could be obtained by differentiate calculation, and the total dynamic resistance R D is given by the following expression:…”

“…[2][3][4] But in most studies the performance of the detectors was measured post irradiation, which couldn't really reflect the irradiation effects in the case of operation conditions. In this paper, we have investigated the online radiation effects of mid-wavelength HgCdTe photovoltaic detectors by measuring their current-voltage (I-V) curves in the presence of gamma irradiation intending to provide a more practical and essential insight into the physical mechanism of the performance deterioration when exposed to radiation.…”