A comparison of lower and higher LET heavy ion irradiation effects on silicon NPN rf power transistors

Bharathi, M. N.; Pushpa, N.; Vinayakprasanna, N. H.; Prakash, A. P. Gnana

doi:10.1016/j.nima.2016.03.083

Cited by 5 publications

(2 citation statements)

References 20 publications

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“…The thickness of the emitter (n + ) is ≈ 1 µm and the base (p + ) thickness is ≈ 2 µm (13,14). Figure 1 shows the cross-sectional view of the transistors used for the present research work.…”

Section: Methodsmentioning

confidence: 99%

Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

Bharathi

Hegde

Anjum

et al. 2017

Radiation Effects and Defects in Solids

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The total dose effects of 1 MeV electrons on the dc electrical characteristics of silicon NPN transistors are investigated in the dose range from 100 krad to 100 Mrad. The different electrical characteristics such as Gummel characteristics, excess base current ( I B ), dc current gain (h FE ), transconductance (g m ), displacement damage factor (K) and output characteristics were studied in situ as a function of total dose. A considerable increase in base current (I B ) and a decrease in h FE , g m and I CSat was observed after 1 MeV electron irradiation. The collector-base (C-B) junction capacitance of transistors was measured to estimate the change in the effective carrier concentration. After 1 MeV electron irradiation, a considerable degradation in capacitance was observed. The plot of (1/C 2 ) versus voltage shows that the effective carrier concentration and built-in voltage (V bi ) increase marginally upon 1 MeV electron irradiation. The results of 1 MeV electron irradiation were compared with 1 MeV proton and Co-60 gamma irradiation results in the same dose range. The degradation for 1 MeV electron and Co-60 gamma-irradiated transistors was significantly less when compared to 1 MeV proton-irradiated transistor. The 1 MeV proton, 1 MeV electron and Co-60 gamma-irradiated transistors were subjected to isochronal annealing to analyze the recovery of the electrical parameters. ARTICLE HISTORY

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Section: Methodsmentioning

confidence: 99%

Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

Bharathi

Hegde

Anjum

et al. 2017

Radiation Effects and Defects in Solids

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“…Swift heavy ions (SHI) are well known to modify characteristics of the materials (Kuzmann et al, 2023;Wu et al, 2023) and devices such as spintronics (Singh et al, 2016;Zhao et al, 2019), electronic (Bharathi et al, 2016; and sensing (Ramola et al, 2022). These ions have the potential to design ferrites for spintronic (Garg et al, 2023) and gas sensing applications (Bagwan et al, 2022).…”

Section: Swift Heavy Ionsmentioning

confidence: 99%

Physical Property Variation of Ferrite Nanoparticles under Heavy Ion Irradiation

Dhyani,

Joshi,

Sahoo

et al. 2024

Prabha Materials Science Letters

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The size-dependent behavior of nanostructured ferrite is well established. Various physical properties such as magnetic, optical and electrical exhibit strong size dependence. Thus, any treatment which causes a change in size is able to modify the characteristics of ferrites. The result of this effect can be seen when these ferrites are subjected to an intense heavy ion beam which modifies the physical properties of ferrites. This modification is related to cation redistribution owing to size change in most of the cases under heavy ion irradiation. However, few recent studies show that cation redistribution may occur under ion irradiation even though no size change is observed. The objective of this review is to highlight this effect in ferrite systems which ultimately may provide ample opportunity for its potential applications.

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Investigation of total dose effects in SiGe HBTs under different exposure conditions

Sun

Liu

et al. 2018

Radiation Physics and Chemistry

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A comparison of lower and higher LET heavy ion irradiation effects on silicon NPN rf power transistors

Cited by 5 publications

References 20 publications

Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

Physical Property Variation of Ferrite Nanoparticles under Heavy Ion Irradiation

Investigation of total dose effects in SiGe HBTs under different exposure conditions

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