A comparison of Monte Carlo and analytic treatments of displacement damage in Si microvolumes

Random telegraph signals in proton irradiated CCDs and APS

“…the sum of elastic and non-elastic components). In an earlier work [2] it was suggested that RTS probability might scale with elastic NIEL (which is the same as total NIEL for proton energies of a few MeV but reduces to~90% of the total at 10 MeV and~60% at 60MeV [8]). This was suggested because hot pixels are likely to be produced by 'common' events that happen (rarely) to occur in high field regions of the device.…”

“…One of the CCD57-l0 devices was proton irradiated at 10 and 60 MeV (at PSI), the higher energy having a factor 2.2 higher fluence. The difference in NIEL for these two energies is expected to be 2.25 [8], so that the two regions should have similar dark currents. In fact the 60 MeV region had~20% higher dark current than the 10 MeV region.…”

Impact of the Border Crossing Effects on the DCNU for Pixels Arrays Irradiated with High Energy Protons

“…This effect is negligible when the ranges of the recoil ions are smaller than the dimensions of the pixels. But when the ranges of recoil nuclei approach the sizes of the sensitive volume, the probability of border crossing increases and can affect the shape of the DCNU [15]. This phenomenon could be particularly sensitive for certain applications that require pixels of very small dimensions.…”

Electron collision dose enhancement

“…Electron and proton displacement damage dose enhancement at interfaces has already been described [5], [6]. Displacement damage dose enhancement is analogous to X-ray dose enhancement, except the secondary photo-Compton currents are replaced by recoiling nuclear fragments.…”