A comparison of RS/1 and SPAYN for the generation of worst-case spice level 3 MOSFET model parameters

Clancy, R.; Welten, Marieke; Power, J.A.; Mason, B.; Stribley, P.; Mathewson, A.

doi:10.1049/ic:19950929

IEE Colloquium on `Improving the Efficiency of IC Manufacturing Technology' 1995

DOI: 10.1049/ic:19950929

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A comparison of RS/1 and SPAYN for the generation of worst-case spice level 3 MOSFET model parameters

R. Clancy¹,

Marieke Welten²,

J.A. Power³

et al.

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A comparison of RS/1 and SPAYN for the generation of worst-case spice level 3 MOSFET model parameters

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