A Comparison of Various Discretization Schemes for the Stationary Semiconductor Device Continuity Equation

Abstract

Using a simple test‐problem, we compare numerical results for the stationary semiconductor device continuity equation for electrons, obtained by the well known Box‐scheme, by Zlamal's Finite Element and by van Welij's Finite Element scheme as well as by two new discretization schemes. To interpret these results a classification of the considered schemes is proposed.