A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

Moug, Richard T.; Bradford, C.; Izdebski, Frauke; Davidson, Ian A.; Curran, Arran; Warburton, Richard J.; Prior, K. A.; Aouni, A.; Morales, F. M.; Molina, S. I.

doi:10.1016/j.jcrysgro.2008.10.040

Cited by 9 publications

(5 citation statements)

References 18 publications

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“…Moreover, this is the first demonstration that metastable ZB-MgS can be synthesized by electrochemical processes as bulk cathode compounds, as opposed to epitaxial stabilization in thin films. 29 As this is a direct wide band gap semiconductor, 30 our study opens the door for a wide range of applications of ZB-MgS such as in electronics, optoelectronics, as well as in energy devices.…”

Section: ■ Results and Discussionmentioning

confidence: 91%

Zinc Blende Magnesium Sulfide in Rechargeable Magnesium-Sulfur Batteries

et al. 2018

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Magnesium-sulfur batteries are one of the most promising next-generation battery systems due to their high energy density, low cost, and high level of safety. However, the reaction mechanisms are not well understood, and in particular, the discharge reaction products have not yet been identified. Here we show that zinc blende magnesium sulfide is observed as a reaction product after discharging in magnesium-sulfur batteries. When magnesium reacts electrochemically with sulfur in a sulfone-based magnesium electrolyte, sulfur becomes amorphous consisting of magnesium and sulfur in the cathode. In this study, it has been found that the amorphous material has an unusual local structure, which is not related to the most stable rock salt phase of magnesium sulfide but rather the metastable zinc blende phase. It was indicated that this material realizes the reversibility of magnesium-sulfur batteries.

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Section: ■ Results and Discussionmentioning

confidence: 91%

Zinc Blende Magnesium Sulfide in Rechargeable Magnesium-Sulfur Batteries

et al. 2018

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“…We have, therefore, investigated replacement metastable alloys based on MgS, and found one composition, Zn 0.2 Mg 0.8 S 0.64 Se 0.36 [19] particularly useful as it is air-stable and insoluble in both acids and alkalis. In addition, although the bandgap is smaller than MgS, there is little change in carrier confinement with ZnSe or CdSe [26].…”

Section: Development and Applications Of Metastable Mgs And Mgsrich Amentioning

confidence: 98%

Metastable II–VI sulphides: Growth, characterization and stability

Prior¹,

Bradford²,

Davidson³

et al. 2011

Journal of Crystal Growth

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“…Accordingly, we have recently developed a MgS‐rich ZnMgSSe barrier that resists acid attack, allowing us to use MgS as a sacrificial layer 7, 8. This alloy has also been found to be an excellent barrier material, providing comparable confinement and optical emission to pure MgS 9.…”

Section: Introductionmentioning

confidence: 99%

Determination of the band‐gap of MgS and MgS‐rich Zn_1−xMg_xS_ySe_1−y alloys from optical transmission measurements

Davidson

Moug

Izdebski

et al. 2010

Physica Status Solidi (b)

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451 3136As part of our development of an epitaxial lift-off process, utilising a sacrificial magnesium sulphide (MgS) layer, we have developed a MgS-rich ZnMgSSe alloy which provides excellent carrier confinement and resists both oxidation and acid attack. Here the optical transmission of the alloy has been measured and its bandgap determined as a direct transition at 4.19 AE 0.04 eV. Its composition has also been determined by X-ray interference (XRI) and comparison with simulations. For a range of alloy samples we obtain compositions of the Zn 1Àx Mg x S y Se 1Ày layers which are (x, y) ¼ (0.80 AE 0.02, 0.645 AE 0.025). Using the alloy bandgap and composition we have determined direct bandgap transition energy for MgS by extrapolation. This is found to be 4.78 AE 0.14 eV.

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A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

Cited by 9 publications

References 18 publications

Zinc Blende Magnesium Sulfide in Rechargeable Magnesium-Sulfur Batteries

Zinc Blende Magnesium Sulfide in Rechargeable Magnesium-Sulfur Batteries

Metastable II–VI sulphides: Growth, characterization and stability

Determination of the band‐gap of MgS and MgS‐rich Zn_1−xMg_xS_ySe_1−y alloys from optical transmission measurements

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A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

Cited by 9 publications

References 18 publications

Zinc Blende Magnesium Sulfide in Rechargeable Magnesium-Sulfur Batteries

Zinc Blende Magnesium Sulfide in Rechargeable Magnesium-Sulfur Batteries

Metastable II–VI sulphides: Growth, characterization and stability

Determination of the band‐gap of MgS and MgS‐rich Zn1−xMgxSySe1−y alloys from optical transmission measurements

Contact Info

Product

Resources

About

Determination of the band‐gap of MgS and MgS‐rich Zn_1−xMg_xS_ySe_1−y alloys from optical transmission measurements