A Comparison Study of the Features of Dc/Dc Systems With Si Igbt and Sic Mosfet Transistors

Abstract

This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency range of 10÷60 kHz. Analysis of the results points to a massive advantage of the SiC-based design over the Si-based one.

Przegląd Obecnie Wykorzystywanych Izolowanych Przetwornic Prądu Stałego

“…Every of battery electric vehicle (BEV), plug in electric vehicle (PEV) and fuel cell electric vehicle (FCEV) needs to be useful minimum a few power converters inside [8,13].…”