A Complementary Metal Oxide Semiconductor Image Sensor with Increased Dynamic Range Using Feedback Reset Mechanism

Choi, Byung-Soo; Jo, Sung‐Hyun; Bae, Myunghan; Kim, Jeongyeob; Choi, Pyung; Shin, Jang−Kyoo; Joo, Young Hoon

doi:10.1166/sl.2015.3479

Cited by 1 publication

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“…Thus, the dynamic range (DR) of conventional CISs, which are used in mobile applications, has been gradually decreasing. To solve this problem, several techniques have been reported [4][5][6][7][8][9][10][11][12][13][14][15]. The logarithmic response image sensor achieved a very wide DR of 120 dB [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Dual-Sensitivity Mode CMOS Image Sensor for Wide Dynamic Range Using Column Capacitors

Lee¹,

배명한²,

Choibyoungsoo³

et al. 2017

Journal of Sensor Science and Technology

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A wide dynamic range (WDR) CMOS image sensor (CIS) was developed with a specialized readout architecture for realizing highsensitivity (HS) and low-sensitivity (LS) reading modes. The proposed pixel is basically a three-transistor (3T) active pixel sensor (APS) structure with an additional transistor. In the developed WDR CIS, only one mode between the HS mode for relatively weak light intensity and the LS mode for the strong light intensity is activated by an external controlling signal, and then the selected signal is read through each column-parallel readout circuit. The LS mode is implemented with the column capacitors and a feedback structure for adjusting column capacitor size. In particular, the feedback circuit makes it possible to change the column node capacitance automatically by using the incident light intensity. As a result, the proposed CIS achieved a wide dynamic range of 94 dB by synthesizing output signals from both modes. The prototype CIS is implemented with 0.18-µm 1-poly 6-metal (1P6M) standard CMOS technology, and the number of effective pixels is 176 (H) × 144 (V).

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