A Complex for Diagnostics of Laser Radiation of Semiconductor Targets Excited by a High-Frequency-Modulated Electron Beam

Abstract

A complex of equipment for diagnosing the parameters of laser radiation of semiconductor targets, which are excited by high-frequency-modulated electron-beam pulses, is described. The ability to control the shape and duration of laser radiation in the picosecond range via high-frequency modulation of an accelerating-voltage pulse was demonstrated experimentally. A train of laser-radiation pulses with a maximum intensity of up to 2 × 10 7 W/cm 2 was obtained on a cadmium sulfide target (λ = 525 nm).