A comprehensive analysis of SVPWM for a Five-phase VSI based on SiC devices applied to motor drives

Acosta-Cambranis, Fernando; Zaragoza, Jordi; Romeral, L.

doi:10.1109/iecon.2019.8927394

Cited by 4 publications

(1 citation statement)

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“…N OWADAYS, multiphase electrical systems are getting attention in various applications, such as energy transmission, renewable energy generation, electric traction, and industrial applications [1]- [3]. Among the advantages that multiphase systems have over conventional three-phase systems are the lower current per phase, better fault tolerance, more degrees of freedom, and greater reliability, among others [4], [5].…”

Section: Introductionmentioning

confidence: 99%

New Modulation Strategy for Five-Phase High-Frequency VSI Based on Sigma–Delta Modulators

Acosta-Cambranis

Zaragoza

Martinez

et al. 2022

IEEE Trans. Power Electron.

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This paper proposes a new modulation strategy for a five-phase high-frequency voltage source inverter (VSI) based on sigma-delta (Σ∆) modulators. This modulation strategy of fivephase large-medium-zero vectors Σ∆ (5P-LMZV-Σ∆) applies the same switching states as the two large and two medium space vector modulation (2L+2M SVM). Because Σ∆ modulations are designed to operate at high switching frequencies, using widebandgap (WBG) devices therefore improves the efficiency of the VSI, despite its operating at these high switching frequencies. We analyze the use of single-loop and double-loop Σ∆ modulators (SL-5P-LMZV-Σ∆ and DL-5P-LMZV-Σ∆, respectively) and additionally modify the proposed modulation strategy to use all the vectors in order to analyze the effects from applying small vectors. The proposed modulation techniques allow: 1) minimizing switching losses due to the reduced switching operations; 2) mitigating low-order harmonics; 3) decreasing the amplitude of high-frequency harmonics; 4) reducing common-mode voltage (CMV) dv/dt transitions. We analyze the performance of the proposed modulation technique using Matlab/Simulink and PLECS, and then compare it with 2L+2M SVM. Using a VSI with silicon carbide (SiC) MOSFET, we obtained our experimental results demonstrating these characteristics, by which we conclude that our proposed strategy is an improvement over 2L+2M SVM.

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