A Comprehensive Analysis of the 2-DEG Transport Properties in In _x Al_{1 – x} N/AlN/GaN Heterostructure: Experiments and Numerical Simulations

A Low-power, High-gain and Excellent Noise Figure GaN-on-SiC LNA Monolithic Microwave Integrated Circuit (MMIC) operating at Ka-band for 5G/6G Application

“…The AlN/GaN/AlGaN double heterojunction epitaxy structure is grown on SiC substrate by metalorganic chemical vapor deposition (MOCVD) [8]. Due to the strong polarization effect of AlN, the energy band difference of AlN/GaN is large, so a high concentration of two-dimensional electron gas (2-DEG) can be formed at the interface of the two materials [9][10][11][12]. The negative polarization charge on the back of AlN increases the energy band of the AlGaN barrier, so that the probability of 2-DEG entering AlGaN is greatly reduced.…”

Investigation of Electrical Property and Thermal Stability in Enhancement-Mode InxAl1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiOx Gate and Fluorine Treatment

“…The LM In x Al 1-x N/AlN/GaN epilayer with In fraction of around 18% was grown on SiC substrates using metalorganic chemical vapor deposition (MOCVD) with the detailed structure given in our previous work [1]. Four different devices were fabricated on the same wafer substrate, including conventional depleted (MS HEMT), pure fluorine ion-implanted (FII HEMT), NiO x -based (NiO HEMT), and fluorine treatment combined with NiO x gate (F-NiO HEMT).…”

“…The presence of F ions away from the 2DEG channel is considered to be negligible. Note that the epitaxial structure and corresponding physics parameters used in Eq.1 were based on our previous work [1], and the doping concentration of the GaN substrate was assumed to be negligible (unintentional doping). Compared to conventional AlGaN/GaN, the InAlN/AlN/GaN interface has a higher charge density (2.03 × 10 cm -2 ) due to its stronger spontaneous polarization strength.…”

“…HE GaN-based heterostructure high electron mobility transistors (HEMTs) incorporating indium (In) components have attracted considerable research interest featuring enhanced polarization effects and reduced barrier layer thickness [1][2][3]. As compared with the conventional D-mode devices, to broaden the range of applications, the development of E-mode GaN HMETs is crucial.…”