2019 19th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA) 2019
DOI: 10.1109/sta.2019.8717282
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A comprehensive device modeling of solid state dye sensitized solar cell with SCAPS-1D

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Cited by 12 publications
(4 citation statements)
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“…Doping affects the degree of semiconductor characteristics in two ways. The presence of doping atoms introduces motion impedance, impeding the free movement of charge carriers and consequently limiting their overall mobility within the material [18,46,47]. Dopants are classified into two types: donor and acceptor.…”
Section: Effect Of Active Layer Mobility and Doping Density On Cell P...mentioning
confidence: 99%
“…Doping affects the degree of semiconductor characteristics in two ways. The presence of doping atoms introduces motion impedance, impeding the free movement of charge carriers and consequently limiting their overall mobility within the material [18,46,47]. Dopants are classified into two types: donor and acceptor.…”
Section: Effect Of Active Layer Mobility and Doping Density On Cell P...mentioning
confidence: 99%
“…Recently, simulation has been a great tool for optimizing and analyzing the performance of e cient solar cells. In this study, we operate solar cell capacitance simulator structures in 1 dimension (SCAPS-1D) which is a one-dimensional simulator tool for solar cell devices developed by ELIS, University of Gent, and can be used freely by PV eld researchers [16,17].SCAPS simulator can solve the Poisson and continuity equations of electron and holes.The equations are: (d 2 /dx 2 ) Ψ(x) = e/ε 0 ε r p(x)-n(x) + N D -N A + ρ p -ρ n (1) (dJ n /dx) = G -R and (dJ p / dx) = G -R (2) J n = Dn (dn/dx) + µ n n (dΦ/dx) (3) J p = Dp (dp / dx) + µ p p (dΦ/dx) (4) where Ψ(x) is the electrostatic potential, e is electrical charge, ε r is the relative and ε 0 is the vacuum permittivity, n and p are electron and hole concentrations, respectively, N A is acceptor type and N D is charged impurities of donor, ρ n and ρ p are electron and hole volume density, G is generation rate and R is recombination rate [18][19][20]. SCAPS-1D solves the above equations and calculates all point quasi-Fermi level and electrostatic potential for electrons and holes [21].…”
Section: Simulation and Analysismentioning
confidence: 99%
“…The effect of band gap on the various solar cell characteristics has been examined since the band gap of a perovskite absorber is a significant parameter [52,53]. In this study the band gap is adjusted from 1.2eV to 2.0eV.…”
Section: Effect Of the Bandgap Of The Absorber Layermentioning
confidence: 99%