alignment for charge transport. [11] TMOs have work functions ranging from 3 (ZrO 2) to 7 eV (V 2 O 5), making them suitable candidates for energy-level alignment in a variety of devices. [12] In crystalline silicon (c-Si) solar cells, TMOs are being used as transparent, dopant-free heterocontacts to the silicon absorber. [13] These have the potential to replace the heavily doped contacts found in current state-of-the-art heterojunction solar cells, [14,15] which can suffer from parasitic optical absorption and increased Auger recombination at the silicon surface. [16,17] TMOs are commonly deposited using different physical vapor deposition (PVD) techniques such as thermal evaporation and sputtering. [18,19] Atomic layer deposition (ALD) has emerged as an alternative for TMO deposition. [20] ALD offers greater thickness control and uniformity than PVD due to its reaction-limited growth process, making it ideal for applications requiring ultra-thin, conformal oxides on textured silicon surfaces. [21-24] While this technique has many advantages over PVD, depending on molecular precursor choice, it may require "energy enhancement" of the oxidant pulse, most commonly in the form of plasma or ozone, to achieve efficient growth. [25] Additionally, the growth rate of ALD is typically on the order of angstroms per Molybdenum oxide thin films are successfully deposited using spatial atomic layer deposition (SALD), a tool designed for high-throughput industrial film growth. The structural and optical properties of the film are evaluated using ultraviolet photoelectron spectroscopy, high-resolution transmission electron microscopy, and spectroscopic ellipsometry. To demonstrate the applicability of molybdenum oxide in industrial settings the films are applied as holeselective silicon heterojunction contacts for solar cells. When paired with intrinsic amorphous silicon passivation layers, implied open-circuit voltages of 699 mV are achieved. The carrier transport is unaffected by low-temperature contact anneals up to 300 °C with contact resistivities of ≈ 10 mΩ cm 2. Finally, the optical performance of silicon solar cells featuring different front hole-selective heterojunction structures are simulated. It is shown that the generation current density of heterojunction solar cells can be significantly increased with the addition of SALD molybdenum oxide contacts.