2019
DOI: 10.1109/jphotov.2019.2926628
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A Comprehensive Methodology to Evaluate Losses and Process Variations in Silicon Solar Cell Manufacturing

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Cited by 19 publications
(11 citation statements)
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“…(1) SunSolve used to perform ray tracing of the optics of the solar cell and all of the thin films present within the device thus quantify JG, front and escape reflectance loss and parasitic optical absorption. (2) Lumerical is used to perform finite difference time domain (FDTD) simulations to evaluate potential improvements in light trapping if nanostructures dielectric layers are used. This tool accounts for reflectance, scattering (if any), absorption, and transmission within the substrate itself, and the results of Lumerical are fed back into SunSolve to calculate the potential gains in JG.…”
Section: Modeling Methodologymentioning
confidence: 99%
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“…(1) SunSolve used to perform ray tracing of the optics of the solar cell and all of the thin films present within the device thus quantify JG, front and escape reflectance loss and parasitic optical absorption. (2) Lumerical is used to perform finite difference time domain (FDTD) simulations to evaluate potential improvements in light trapping if nanostructures dielectric layers are used. This tool accounts for reflectance, scattering (if any), absorption, and transmission within the substrate itself, and the results of Lumerical are fed back into SunSolve to calculate the potential gains in JG.…”
Section: Modeling Methodologymentioning
confidence: 99%
“…Although the levelized cost of electricity of PV systems has dropped to incredibly low levels in recent years, there is still room for further improvements in terms of the efficiency, manufacturing cost, and durability of PV cells and modules. To maximize cell efficiency, the optical losses, recombination losses, and resistive losses [1], [2] of solar cells must be minimized.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 6a also shows the distribution of the individual current losses, broken down into loss due to front reflectance (J R − f ), front parasitic absorption (J loss − f ), rear parasitic absorption (J loss − r ), and escape reflectance (J R − esc ). [62][63][64] There is an incremental improvement in the J G for each structure due to an improved blue response in the quantum efficiency (QE) curve (380-500 nm range). Where the standard a-Si:H-based SHJ cell has an expected J G of 39.4 mA cm −2 , the use of MoO x results in an increase of 0.6-0.7 mA cm −2 .…”
Section: Opportunities For Sald Moo X In Silicon Photovoltaicsmentioning
confidence: 99%
“…This was determined by using a photon flux that allows a reference cell to match the short-circuit current density ( J sc ) derived from known external quantum efficiency data. [22,23] The contact recombination ( J 0c ) values were extracted using a finite element simulator called Griddler Pro 2.5. The PL images were analyzed to extract the J 0c using an autofitting routine built into the Griddler AI.…”
mentioning
confidence: 99%
“…It uses unique modulation frequencies for the LEDs to perform full spectrum measurements which takes about 1 s. An integrating sphere measures reflectance at each location. [22,23] In our case, we compared the light reflectance of the ITO-based test samples with transferred foil and evaporated metal as back contact.…”
mentioning
confidence: 99%