A comprehensive model of catastrophic optical-damage in broad-area laser diodes

Chin, A. K.; Bertaska, R. K.; Jaspan, Martin A.; Flusberg, A.; Swartz, S. D.; Knapczyk, M.; Petr, R. A.; Smilanski, I.; Jacob, J. H.

doi:10.1117/12.804834

Cited by 6 publications

(9 citation statements)

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“…These defect networks are not topic of this report. However the appearance of those, which are created in standard tests [17,[23][24][25][26][27][28][29][30] and in single-pulse step tests [4,9], are absolutely similar. Therefore we consider it very likely that COD in broad-area lasers takes place in the same way during single-pulse step tests and cw operation.…”

Section: Discussionmentioning

confidence: 99%

“…The defect serves as the starting point for the creation of a defect network within the plane of the waveguide. This topic has been extensively studied in the literature [17,[23][24][25][26][27][28][29][30] and modeled [4,9,28], and will not be further considered here. In case of single-pulse tests with only one high pulse resulting in a high overload at the facet, the damaged front facet area correlates with the power [18,31].…”

Section: Single-pulse (Step) Tests: Technical Implementationsmentioning

confidence: 99%

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Analysis of bulk and facet failures in AlGaAs-based high-power diode lasers

et al. 2013

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Mechanisms are addressed limiting the reliability high-power diode lasers. An overview is given on the kinetics of the Catastrophic Optical Damage (COD) process, which is related to highest output powers. It involves fast defect growth fed by re-absorption of laser light. Local temperatures reach the order of the melting temperature of the waveguide of the device. The process starts either at a facet or at any weak point, e.g., at extended defects in the interior of the cavity.

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Section: Discussionmentioning

confidence: 99%

Section: Single-pulse (Step) Tests: Technical Implementationsmentioning

confidence: 99%

Analysis of bulk and facet failures in AlGaAs-based high-power diode lasers

et al. 2013

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“…Whilst facet passivation techniques can effectively suppress or delay catastrophic optical mirror damage (COMD) extending emitter reliability into several hundreds thousands of hours, other, less dominant, failure modes such as intra-chip catastrophic optical bulk damage (COBD) become apparent [1]. Imaging through a window opened in the metallization on the substrate (n) side of a p-side down mounted emitter has provided valuable insight into both COMD [2,3] and COBD failure mechanisms [1,4]. Various analytical techniques [1][2][3][4] such as electroluminescence (EL), cathodoluminescence (EBIC, (S)TEM and FIB/SEM [4]), microphotoluminescence (μ-PL) [2] (including time resolved), and deep level transient spectroscopy (DLTS) [4], have been employed to characterize failure sites inside the emitter, which are observed typically as dark line defects (DLDs) extending over a significant length of the laser cavity.…”

Section: Introductionmentioning

confidence: 99%

“…Various analytical techniques [1][2][3][4] such as electroluminescence (EL), cathodoluminescence (EBIC, (S)TEM and FIB/SEM [4]), microphotoluminescence (μ-PL) [2] (including time resolved), and deep level transient spectroscopy (DLTS) [4], have been employed to characterize failure sites inside the emitter, which are observed typically as dark line defects (DLDs) extending over a significant length of the laser cavity. DLDs were found to be consistent with ring cavity modes [3], and contain non-radiative defects such as EL2 traps [4].…”

Section: Introductionmentioning

confidence: 99%

Multi-spectral investigation of bulk and facet failures in high-power single emitters at 980 nm

et al. 2013

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Reliable single emitters delivering >10W in the 9xx nm spectral range, are common building blocks for fiber laser pumps. As facet passivation techniques can suppress or delay catastrophic optical mirror damage (COMD) extending emitter reliability into hundreds of thousands of hours, other, less dominant, failure modes such as intra-chip catastrophic optical bulk damage (COBD) become apparent. Based on our failure statistics in high current operation, only ~52% of all failures can be attributed to COMD. Imaging through a window opened in the metallization on the substrate (n) side of a p-side down mounted emitter provides valuable insight into both COMD and COBD failure mechanisms.We developed a laser ablation process to define a window on the n-side of an InGaAs/AlGaAs 980nm single emitter that is overlaid on the pumped 90µm stripe on the p-side. The ablation process is compatible with the chip wire-bonding, enabling the device to be operated at high currents with high injection uniformity.We analyzed both COMD and COBD failed emitters in the electroluminescence and mid-IR domains supported by FIB/SEM observation. The ablated devices revealed branching dark line patterns, with a line origin either at the facet center (COMD case) or near the stripe edge away from the facet (COBD case). In both cases, the branching direction is always toward the rear facet (against the photon density gradient), with SEM images revealing a disordered active layer structure. Absorption levels between 0.22eV -0.55eV were observed in disordered regions by FT-IR spectroscopy. Temperature mapping of a single emitter in the MWIR domain was performed using an InSb detector. We also report an electroluminescence study of a single emitter just before and after failure.

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“…Whilst facet passivation techniques can effectively suppress or delay catastrophic optical mirror damage (COMD) extending emitter reliability into several hundreds thousands of hours, other, less dominant, failure modes such as intra-chip catastrophic optical bulk damage (COBD) become apparent [1]. Imaging through a window opened in the metallization on the substrate (n) side of a p-side down mounted emitter has provided valuable insight into both COMD [2], [3] and COBD failure mechanisms [1], [4]. Various analytical techniques [1]- [4] such as electroluminescence (EL), cathodoluminescence (EBIC, (S)TEM and FIB/SEM [4]), micro-photoluminescence (μ-PL) [2] (including time resolved), and deep level transient spectroscopy (DLTS) [4], have been employed to characterize failure sites inside the emitter, which are observed typically as dark line defects (DLDs) extending over a significant length of the laser cavity.…”

Section: Introductionmentioning

confidence: 99%