A comprehensive review and side channel attack analysis on radiation-tolerant SRAM cells for aerospace, terrestrial and nuclear applications

Abstract

In memory, single event upset (SEU) and single event multiple node upset (SEMNU) have become the principal problems during the past four decades. Significant dependability issues arise from these upsets in a variety of applications such as space, terrestrial, military, and healthcare sector. The use of scaled on-chip memory devices to store private and sensitive data has grown dramatically in the last several years across all the sectors. Memory devices are seriously at risk from non-invasive side-channel assaults (SCAs), which extract secret and sensitive information as well as during SEU/SEMNU, which may flip stored secret and sensitive information. This article presents the history behind the emergence of radiation-hardened circuits and survey of several techniques to mitigate the impact of radiation over the past few decades along with SCA based on leakage power analysis. By educating the researchers on two crucial on-chip memory issues—radiation effect SEU/SEMNU and SCA—this work seeks to accelerate co-design efforts.