A comprehensive review on recent advancements in d0 ferromagnetic oxide materials

Chouhan, L.; Srivastava, S. K.

doi:10.1016/j.mssp.2022.106768

Cited by 38 publications

(6 citation statements)

References 114 publications

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“…However, recent advancements in materials science have unveiled an exciting aspect of ZnO: its ferromagnetic behavior. 17 This unexpected discovery has opened up new prospects for exploiting ZnO in a multitude of electronic and magnetic applications. Ferromagnetic ZnO nanoparticles, with their small size and unique magnetic properties, have gained significant attention due to their potential to bridge the gap between conventional electronics and brain-inspired computing.…”

Section: Introductionmentioning

confidence: 99%

Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

Elboughdiri,

Iqbal,

Abdullaev

et al. 2023

RSC Adv.

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Section: Introductionmentioning

confidence: 99%

Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

Elboughdiri,

Iqbal,

Abdullaev

et al. 2023

RSC Adv.

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“…In order to separate out the paramagnetic (PM) and ferromagnetic (FM) phases we have fitted the experimental data curves using the function [4]: Table 3. Hyperfine parameters derived from the fit of the 119 Sn Mössbauer spectra of Sn 1−x Fe x O 2 (x = 0.00, 0.03 and 0.05) samples obtained from SnCl 2 for milling times of 3 and 12 h. x = 0.05 * is for sample prepared from SnCl 2 •2H 2 O.…”

Section: Resultsmentioning

confidence: 99%

“…These materials can serve as host semiconductors with spin-polarized carriers, or as spinpolarized sources in hetero-layered structures, replacing ferromagnetic metal/insulator layers to address resistance and lattice mismatches at the interface. Oxide diluted magnetic semiconductors (ODMS) have emerged as promising candidates to meet these requirements [3][4][5]. Transition metal-doped tin dioxide (SnO 2 ) is one such material in this category [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Experimental conditions for room temperature ferromagnetism in Fe-doped SnO₂ via mechanochemical milling and thermal treatment

Sánchez,

Beltrán,

Baggio Saitovitch

et al. 2024

Mater. Res. Express

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Identifying optimal experimental conditions, preferably through a simple and cost-effective method, for the fabrication of oxide-diluted magnetic semiconductors, such as Fe-doped SnO2, holds great significance in the quest for spintronic materials operating at room temperature (RT). While mechanochemical milling is a well-established technique meeting these requirements, its numerous milling variables necessitate careful consideration of restricted experimental conditions. In this study, we present some experimental mechanochemical milling conditions to prepare impurity-free iron-doped tin dioxide nanoparticles exhibiting a RT ferromagnetic signal. To achieve this, we investigated the effects of milling time, the choice of the starting Sn reactant, and iron concentration on the purity of Sn1-xFexO2 (x=0, 0.03, and 0.05) nanopowders obtained through mechanochemical milling followed by thermal treatment. Characterization through XRD, XANES, and EXAFS at the Fe K-edge, RT Raman spectroscopy, 119Sn and 57Fe Mössbauer spectroscopies, and magnetic measurements was conducted. Among the experimental techniques, micro-Raman spectroscopy proved most effective in detecting the formation of hematite as an impurity phase. Our results indicate that extending the milling time to 12 h, as opposed to 3 h, employing anhydrous SnCl2, instead of SnCl2·2H2O and using the low iron concentration of x = 0.03, results in proper conditions for producing impurity-free samples with a robust RT ferromagnetic signal. The oxidation states for iron and tin ions were determined to be 3+ and 4+, respectively, with both occupying octahedral sites, suggesting iron's replacement of tin. Our findings propose that both the bound magnetic polaron and RKKY models offer potential explanations for the origin of the ferromagnetic signal observed at room temperature in Sn0.97Fe0.03O2 sample milled for 12 h.

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“…Ternary oxides, in particular, offer improved properties compared to binary oxides and can be tailored for applications like optoelectronic devices and spintronics 13 , 14 . While room temperature ferromagnetism has been observed in transition metal-doped binary semiconductor oxides like ZnO and SnO 2 15 – 21 , there's limited research on ternary oxide Zinc stannate (ZnSnO 3 and Zn 2 SnO 4 ), known as ZTO, doped with transition metal ions 22 .…”

Section: Introductionmentioning

confidence: 99%

Improving structural and magnetic properties of zinc stannate thin films through nickel doping via sol–gel method

Cinar

2024

Sci Rep

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Ternary oxides are currently emerging as promising materials for optoelectronic devices and spintronics, surpassing binary oxides in terms of their superior properties. Among these, zinc stannate (Zn2SnO4) stands out due to its stability and attractive physical characteristics. However, despite its outstanding attributes, there is a need to further develop its magnetic properties for spintronic applications. In this study, Ni-doped Zn2SnO4 thin films were synthesized using the sol–gel method, and their magnetic characteristics were investigated for the first time. X-ray diffraction analysis confirmed the high crystallinity of the synthesized samples, even after the incorporation of Ni dopants, without any secondary phases. SEM imaging revealed the cubic structure morphology of the thin films. An increase in the bandgap, dependent on the Ni dopant concentration, was observed for doped zinc stannate, suggesting potential for tailored electronic properties. FTIR spectroscopy confirmed the presence of functional groups within the material. Notably, the magnetic properties of the thin films were analyzed using a vibrating sample magnetometer (VSM), revealing diamagnetic behavior for pure zinc stannate and ferromagnetic properties for Ni-doped Zn2SnO4, which increased with dopant concentration. Overall, the results highlight the excellent structural, optical, and ferromagnetic properties of Ni-doped Zn2SnO4 thin films, positioning them for diverse applications, particularly in optoelectronic and spintronic technology.

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A comprehensive review on recent advancements in d0 ferromagnetic oxide materials

Cited by 38 publications

References 114 publications

Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

Experimental conditions for room temperature ferromagnetism in Fe-doped SnO₂ via mechanochemical milling and thermal treatment

Improving structural and magnetic properties of zinc stannate thin films through nickel doping via sol–gel method

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A comprehensive review on recent advancements in d0 ferromagnetic oxide materials

Cited by 38 publications

References 114 publications

Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

Experimental conditions for room temperature ferromagnetism in Fe-doped SnO2 via mechanochemical milling and thermal treatment

Improving structural and magnetic properties of zinc stannate thin films through nickel doping via sol–gel method

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Product

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Experimental conditions for room temperature ferromagnetism in Fe-doped SnO₂ via mechanochemical milling and thermal treatment