A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Kim, Si Joon; Mohan, Jaidah; Kim, Harrison Sejoon; Hwang, Su Min; Kim, Namhun; Jung, Yong Chan; Sahota, Akshay; Kım, Kihyun; Yu, Hyun Yong; Ryung, Pil; Young, Chadwin D.; Choi, Rino; Ahn, Jinho; Kim, Jiyoung

doi:10.3390/ma13132968

Cited by 36 publications

(29 citation statements)

References 27 publications

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“…[ 2,4,5,47–52 ] In this regard, the influence of various bottom electrodes on ferroelectric properties has been extensively studied based on the metal–ferroelectric–metal (MFM) structure. [ 47–51 ] According to the experimental results reported in the past decade, the use of TiN bottom electrodes could be a useful strategy to improve the ferroelectric properties of Hf 1– x B x O 2 films. [ 2,4,47 ] Moreover, it was found that ferroelectric properties, especially endurance, can be further improved by the deposition method of the TiN bottom electrode: >10 10 cycles in ALD TiN and ≈10 9 cycles in sputtered TiN at a pulse amplitude of 2.5 MV cm −1 .…”

Section: Substrate Materials For Low‐thermal‐budget Ferroelectric Fil...mentioning

confidence: 99%

“…[ 47–51 ] According to the experimental results reported in the past decade, the use of TiN bottom electrodes could be a useful strategy to improve the ferroelectric properties of Hf 1– x B x O 2 films. [ 2,4,47 ] Moreover, it was found that ferroelectric properties, especially endurance, can be further improved by the deposition method of the TiN bottom electrode: >10 10 cycles in ALD TiN and ≈10 9 cycles in sputtered TiN at a pulse amplitude of 2.5 MV cm −1 . [ 54 ] However, to apply these MFM structures directly to electronic device applications, it should be integrated in BEOL rather than FEOL, so a low‐temperature process (<400 °C) is essential (see Figure 2).…”

Section: Substrate Materials For Low‐thermal‐budget Ferroelectric Fil...mentioning

confidence: 99%

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Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Kim

Jung

et al. 2021

Physica Rapid Research Ltrs

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Since the first report on the unexpected ferroelectricity of fluorite-structure oxides in 2011, this topic has provided a pathway for new research directions and opportunities. Based on theoretical calculations and experimental demonstrations, it is now well known that fluorite-structure ferroelectrics are compatible with complementary metal-oxide-semiconductor technology and exhibit ferroelectric properties at extremely thin (<10 nm) thicknesses. It should be noted that the noncentrosymmetric orthorhombic phase, which is responsible for ferroelectric behavior, is formed even at low temperatures (400 C or less). Herein, the various factors such as doping effects, deposition method, annealing method and conditions, and substrate material are reviewed, focusing on thermal budget, especially the low-temperature annealing process for formation of the ferroelectric phase. These low-thermal-budget processes facilitate not only the integration of ferroelectric circuits in the back-end-of-line to increase the effective memory area and add more functionalities but also applications for flexible and wearable electronics.

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Section: Substrate Materials For Low‐thermal‐budget Ferroelectric Fil...mentioning

confidence: 99%

Section: Substrate Materials For Low‐thermal‐budget Ferroelectric Fil...mentioning

confidence: 99%

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Kim

Jung

et al. 2021

Physica Rapid Research Ltrs

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“…The same were used in our previous studies. [ 7,11,20,30 ]…”

Section: Resultsmentioning

confidence: 99%

A Novel Combinatorial Approach to the Ferroelectric Properties in Hf_xZr_1−xO₂ Deposited by Atomic Layer Deposition

Jung

Mohan

Hwang

et al. 2021

Physica Rapid Research Ltrs

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Since HfO2‐based ferroelectric films were reported in 2011, several doping/alloying elements have been introduced to secure interesting ferroelectric/antiferroelectric properties of Hf‐based fluorite‐structured thin films. Using a conventional approach by atomic layer deposition (ALD), an enormous number of experiments would be required to reveal the compositional effects of doping/alloying components in ternary and quaternary systems. Therefore, for a comprehensive study of the ferroelectric properties of HfxZr1−xO2, a novel combinatorial ALD technique that enables the fabrication of multicomponent films with a different composition ratio and thickness via saturated/non‐saturated ALD without changing the supercycle of each material is reported. The gradient of the amount of HfO2 over a 100 mm substrate is achieved using a lower Hf‐precursor temperature that results in an insufficient Hf‐precursor dose for saturated deposition. Systematic study on the HfxZr1−xO2 combinatorial library is carried out by spectroscopic ellipsometry, X‐ray photoelectron spectroscopy, and X‐ray diffraction. Furthermore, TiN/HfxZr1−xO2/TiN capacitors are fabricated to measure the remnant polarization. The obtained results clearly show the ferroelectric–antiferroelectric transition according to continuous composition change instead of discrete research. Therefore, a highly productive method for studying ferroelectricity changes in terms of a doping and a composition of HfO2‐based ferroelectric thin films through a novel ALD combinatorial approach is proposed.

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“…It is interesting to note that the reported O‐fe phase content was higher than 50% in case of 1:1 and 1:3 Hf:Zr compositions. Kim et al [ 36 ] found the O‐fe phase was 42.9% in 10 nm Hf 0.5 Zr 0.5 O 2 in MIM stack with TiN electrodes. These differences in the O‐fe phase fractions could be explained by differences in deposition methods, oxygen exposure during HZO deposition, and electrical field cycling.…”

Section: Discussionmentioning

confidence: 99%

Ferroelectric Phase Content in 7 nm Hf_(1−x)Zr_xO₂ Thin Films Determined by X‐Ray‐Based Methods

Mukundan

Consiglio²,

Triyoso³

et al. 2021

Physica Status Solidi (a)

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The recent discovery of ferroelectric behavior in hafnia-based dielectrics attributed to the formation of noncentrosymmetric orthorhombic phase has opened up potential uses in numerous applications ranging from ferroelectric field effect transistors to pyroelectric energy harvesters. Herein, the relative amounts of ferroelectric orthorhombic phase (space group Pca2 1 ) in 7 nm-thick hafnia-zirconia (HZO) films of three compositions (Hf 0.2 Zr 0.8 O 2 , Hf 0.5 Zr 0.5 O 2 , and Hf 0.8 Zr 0.2 O 2 ) are reported. The ferroelectric behavior in these ultrathin HZO films prepared by atomic layer deposition (ALD) in metal-insulator-metal (MIM) stacks is verified by polarization measurements. Using grazing incidence X-ray diffraction (GIXRD) and grazing incidence-extended X-ray absorption fine structure spectroscopy (GI-EXAFS), the relative phase percentages of three key phases (monoclinic-P2 1 /c, orthorhombic-Pca2 1 , and tetragonal-P4 2 /nmc) are assessed. Among these compositions, Hf 0.5 Zr 0.5 O 2 is determined to have the highest amount of the ferroelectric phase. The monoclinic phase is found to be dominant for Hf 0.8 Zr 0.2 O 2 , whereas the tetragonal phase is found to be dominant for Hf 0.2 Zr 0.8 O 2 . Independent GI-EXAFS measurements of Hf and Zr suggest that there is no significant segregation of either oxide into a particular crystal phase. Strong agreement between the measurement methods reveals the structure-property function correlation in these ultrathin hafnia-zirconia films with greater certainty than previously achieved.

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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Cited by 36 publications

References 27 publications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

A Novel Combinatorial Approach to the Ferroelectric Properties in Hf_xZr_1−xO₂ Deposited by Atomic Layer Deposition

Ferroelectric Phase Content in 7 nm Hf_(1−x)Zr_xO₂ Thin Films Determined by X‐Ray‐Based Methods

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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Cited by 36 publications

References 27 publications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition

Ferroelectric Phase Content in 7 nm Hf(1−x)ZrxO2 Thin Films Determined by X‐Ray‐Based Methods

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A Novel Combinatorial Approach to the Ferroelectric Properties in Hf_xZr_1−xO₂ Deposited by Atomic Layer Deposition

Ferroelectric Phase Content in 7 nm Hf_(1−x)Zr_xO₂ Thin Films Determined by X‐Ray‐Based Methods