A Consideration on Amplification Function in BJT Evers-Moll Model and PTT (II) ---- H Parameters in the Small Signal Amplifier Circuit----

Abstract

The notion of PTT (Photon Transport Transistor) has been proposed in 1989 as an optical coupling device of light emitting diode (LED) and light receiving diode (Photo Diode, PD), where the carrier of the base layer is light (Photon) only. In this paper, in order to deal with the various applications of PTT circuit more theoretically, based on the approximate VI characteristic equation of LED and PD, we newly derive the h parameters in PTT emitter common circuit, while referring to the h parameter of Bipolar Junction Transistor (BJT).