A continuous Czochralski silicon crystal growth system

Wang, C.; Zhang, H.; Wang, T.H.; Ciszek, T.F.

doi:10.1016/s0022-0248(02)02241-8

Cited by 34 publications

(17 citation statements)

References 11 publications

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“…Therefore, since the early days of Cz growth, there had been many ideas and many patents to overcome these weaknesses by developing a semicontinuous or a continuous process (Altekrüger, 1994;Lorenzini et al, 1977;Wang et al, 2003;Zulehner, 1982). The biggest problems when operating a continuous system are the reactivity of liquid silicon, the zero tolerance of the process for particles, and the increase of complexity of the whole system.…”

Section: Multipulling Feeding and Continuous Growthmentioning

confidence: 99%

“…Since the melting process takes place parallel to the growth process, the process cycle time is reduced. However, feeding in solid silicon at the same time as a single crystal is pulled bears the risk that a solid particle is floating around and is touching the growth interface, a problem that is somewhat reduced by using double crucible arrangements (Bender and Smith, 2012;Swaminathan, 2014a;Wang et al, 2003). The U.S.-based company GT-AT has announced the introduction of a CCz system, after they had purchased a couple of years ago the American equipment manufacturer and ingot producer Confluence .…”

Section: Multipulling Feeding and Continuous Growthmentioning

confidence: 99%

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Silicon Crystallization Technologies

Dold

2015

Semiconductors and Semimetals

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Section: Multipulling Feeding and Continuous Growthmentioning

confidence: 99%

Section: Multipulling Feeding and Continuous Growthmentioning

confidence: 99%

Silicon Crystallization Technologies

Dold

2015

Semiconductors and Semimetals

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“…Silicon melt flow in vertical magnetic fields or cusp-shaped magnetic fields was investigated by the experimental observation methods based on X-ray radiography and by numerical simulation in the last decade [13,14]. A continuous Czochralski silicon crystal growth system with a shallow melt was even developed to suppress the turbulent flow in large silicon melt [15]. An electromagnetic Czochralski method using steady, alternating and combined magnetic fields and electromagnetic force (EMF) were emphasized recently.…”

Section: Large Diameter Silicon Crystal Growthmentioning

confidence: 99%

Monocrystalline silicon used for integrated circuits: still on the way

Chen

Yang

Que

2008

Front. Mater. Sci. China

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With the rapid development of semiconductor technology, highly integrated circuits (ICs) and future nano-scale devices require large diameter and defect-free monocrystalline silicon wafers. The ongoing innovation from silicon materials is one of the driving forces in future micro and nano-technologies. In this work, the recent developments in the controlling of large diameter silicon crystal growth processes, the improvement of material features by co-doping with the intend-introduced impurities, and the progress of defect engineered silicon wafers (epitaxial silicon wafer, strained silicon, silicon on insulator) are reviewed. It is proposed that the silicon manufacturing infrastructure could still meet the increasingly stringent requirements arising from ULSI circuits and will expand Moore's law into a couple of decades.

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“…Detailed descriptions of numerical modeling are available [6,7]. The boundary conditions used in the current study are as follows:…”

Section: Two-dimensional System Modelmentioning

confidence: 99%

“…Transport phenomena of the proposed CCZ system have been investigated for small-diameter growth [6]. In the work described in this paper, the CCZ growth of large-diameter crystals is simulated.…”

Section: Introductionmentioning

confidence: 99%