2014
DOI: 10.1016/j.jcis.2014.08.027
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A controlled anion exchange strategy to synthesize core-shell β-bismuth oxide/bismuth sulfide hollow heterostructures with enhanced visible-light photocatalytic activity

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Cited by 44 publications
(8 citation statements)
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“…To further understand the effect of the h/m-WO 3 phase junction photocatalyst on photocatalytic activity, the optical properties, energy gap, and the band structure of WO 3 samples were studied, respectively. Optical absorption properties of a semiconductor are often closely associated with its energy level and band gap and are recognized as a key factor in determining photocatalytic activity. …”
Section: Results and Discussionmentioning
confidence: 99%
“…To further understand the effect of the h/m-WO 3 phase junction photocatalyst on photocatalytic activity, the optical properties, energy gap, and the band structure of WO 3 samples were studied, respectively. Optical absorption properties of a semiconductor are often closely associated with its energy level and band gap and are recognized as a key factor in determining photocatalytic activity. …”
Section: Results and Discussionmentioning
confidence: 99%
“…The entire ZnO shows a type IV isotherm with a type H3 hysteresis loop that is found in the mesoporous materials with slit holes produced by aggregation of layered structure, which proves the co‐existence of itself holes and accumulation holes in ZnO particles. this kind of mesoporous materials is very useful in photocatalysis as it can promote the transportation of reactant molecules and products . Each inset distinctly exhibits that mesoprous and macropores co‐exist in the each kind of ZnO and the pore size distribution of S2 and S3 is more concentrated than that of S1 and S4.…”
Section: Resultsmentioning
confidence: 99%
“…Different bismuth-containing semiconductors have similar layered structures, which makes the preparation of heterojunctions between two bismuth-containing photocatalysts easy. Many composite photocatalysts of this kind have been reported in recent years; e.g., Bi2O3-BiVO4 [50][51][52], Bi2O3-Bi2WO6 [53], Bi2O3/Bi2SiO5 [54], BiOBr/Bi24O31Br10 [55], BiOI/BiOBr and BiOCl/BiOI [56,57], BiOCl/BiVO4 [58], BiOI/Bi2O2CO3 [59,60], Bi2O3-Bi2S3 [61,62], BiVO4/Bi2O2CO3 [63], and Bi2O2CO3/ Bi2MoO6 [64], BiOI/Bi2WO6 [65], β-Bi2O3-BiOI [66], Bi-OI/Bi2MoO6 [67] and BiVO4/Bi2WO6 [68].…”
Section: Heterojunctions Between Two Bismuth-containing Semiconductorsmentioning
confidence: 99%