A coplanar 38-GHz SiGe MMIC oscillator

Rheinfelder, C.; Beisswanger, F.; Gerdes, J.; Schmuckle, F.J.; Strohm, K.M.; Luy, J.-F.; Heinrich, W.

doi:10.1109/75.541452

Cited by 29 publications

(5 citation statements)

References 11 publications

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“…20. A monolithic integrated SiGe HBT oscillator with 2-dBm output power at 38 GHz has been fabricated in coplanar technology on high-resistivity silicon substrate [106].…”

Section: B Oscillatorsmentioning

confidence: 99%

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Si and SiGe millimeter-wave integrated circuits

Russer

1998

IEEE Trans. Microwave Theory Techn.

118

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Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeterwave sensorics. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art silicon-and SiGe-based monolithic integrated millimeter-wave circuits. The technological background as well as active and nonlinear devices and passive circuit structures suitable for silicon-and SiGe-based monolithic integrated millimeter-wave circuits are discussed. Examples of such integrated circuits and first systems applications are also presented.Index Terms-Millimeter-wave IC, silicon-based RF circuits.

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“…20. A monolithic integrated SiGe HBT oscillator with 2-dBm output power at 38 GHz has been fabricated in coplanar technology on high-resistivity silicon substrate [106].…”

Section: B Oscillatorsmentioning

confidence: 99%

“…However, currently they can only be realized for frequencies up to approximately 40 GHz [104]- [106]. The coplanar 25.5-GHz SiGe HBT oscillator chip is depicted in the lower part of the module shown in Fig.…”

Section: B Oscillatorsmentioning

confidence: 99%

Si and SiGe millimeter-wave integrated circuits

Russer

1998

IEEE Trans. Microwave Theory Techn.

118

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“…The majority of the monolithic oscillators in silicon bipolar or CMOS technologies published so far address the mobile communications market at frequencies around 2 GHz 22 ' 23 > 24 . Monolithic oscillators operating at frequencies higher than 10 GHz have relied on III-V-semiconductors 25 or SiGe heteroj unction bipolar transistors 26 . Oscillators operating at 10 GHz or 20 GHz are attractive for optical communications systems, e.g.…”

Section: Monolithically Integrated Oscillatormentioning

confidence: 99%

HIGH-PERFORMANCE Si and SiGe BIPOLAR TECHNOLOGIES AND CIRCUITS

Wurzer

Meister

Böck

et al. 2001

Int. J. Hi. Spe. Ele. Syst.

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In this paper we present Si and SiGe bipolar technologies and circuits suited for present and future high-performance communication systems. The silicon bipolar technology described has an implanted base and, without increase in process complexity in comparison to current production technologies, transit frequencies of 52 GHz and maximum oscillation frequencies of 65 GHz are achieved. The transistors of the described epitaxial SiGe-base technologies exhibit transit frequencies of 81 GHz and maximum oscillation frequencies of 95 GHz. Measurement results of circuits realized in these technologies for low power and high-speed applications are presented: a 43 GHz low power dynamic frequency divider, a 23 GHz monolithically integrated oscillator, a 40 Gb/s clock and data (CDR) recovery realized in the pure silicon bipolar technology, and a 53 GHz static frequency divider, a 79 GHz dynamic frequency divider and a 20 GHz / 27 mW dual-modulus prescaler in the SiGe technology. Int. J. Hi. Spe. Ele. Syst. 2001.11:35-76. Downloaded from www.worldscientific.com by NORTHEASTERN UNIVERSITY on 02/05/15. For personal use only.

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“…This is impressively demonstrated by the Si/SiGe heterojunction bipolar transistor (HBT) whose high frequency performance has significantly surpassed that of conventional silicon bipolar transistor technology. This allows now the fabrication of oscillators and low noise amplifiers operating in the Ka band [1].…”

Section: Introductionmentioning

confidence: 99%

Transistor Action by Transit Time Phase Shift - a Study for SiGe Based Devices

Weller

Jorke

Strohm

et al. 1998

28th European Microwave Conference, 1998

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In the present paper we report on a study on extendedfrequency operation in Si/SiGe heterojunction bipolar transistor structures. Calculations based on the results from a previous survey show the conditionsfor which an active behaviour in excess offmax can be obtained High frequency transistors with various shaped base potentials are produced and the unilateral gain is deduced from S-parameter measurements. A first indication of an active behaviour at frequencies above fmax is observed. This preliminary study serves as a guideline for designing structures which enables extended frequency operation.

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A coplanar 38-GHz SiGe MMIC oscillator

Abstract: Design, technology, and first results of a coplanar Si-SiGe HBT oscillator monolithically integrated on high-resistivity silicon are reported. At 38 GHz, an oscillator output power of 2 dBm with a conversion (dc to rf) efficiency of 6% is measured.

Cited by 29 publications

References 11 publications

Si and SiGe millimeter-wave integrated circuits

Si and SiGe millimeter-wave integrated circuits

HIGH-PERFORMANCE Si and SiGe BIPOLAR TECHNOLOGIES AND CIRCUITS

Transistor Action by Transit Time Phase Shift - a Study for SiGe Based Devices

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