A correlated nickelate synaptic transistor

Shi, Jian; Ha, Sieu D.; Zhou, You; Schoofs, Frank; Ramanathan, Shriram

doi:10.1038/ncomms3676

Cited by 490 publications

(518 citation statements)

References 62 publications

(80 reference statements)

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“…To verify that it is the proton and not negative hydrogen ion (such as observed in YH 3-d ) 25 or oxygen vacancies 26 , which diffuses in SNO and also to demonstrate a proof-of-concept solid-state field effect device, a proton-gated transistor is fabricated, as shown in Fig. 6a.…”

Section: Doping-induced Phase Transition By LI and Mg Intercalationmentioning

confidence: 99%

Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping

2014

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The electronic properties of correlated oxides are exceptionally sensitive to the orbital occupancy of electrons. Here we report an electron doping strategy via a chemical route, where interstitial dopants (for example, hydrogen) can be reversibly intercalated, realizing a sharp phase transition in a model correlated perovskite nickelate SmNiO 3 . The electron configuration of e g orbital of Ni 3 þ t 6 2g e 1 g in SmNiO 3 is modified by injecting and anchoring an extra electron, forming a strongly correlated Ni 2 þ t 6 2g e 2 g structure leading to the emergence of a new insulating phase. A reversible resistivity modulation greater than eight orders of magnitude is demonstrated at room temperature. A solid-state room temperature nonvolatile proton-gated phase-change transistor is demonstrated based on this principle, which may inform new materials design for correlated oxide devices. Electron doping-driven phase transition accompanied by large conductance changes and band gap modulation opens up new directions to explore emerging electronic and photonic devices with correlated oxide systems.

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Section: Doping-induced Phase Transition By LI and Mg Intercalationmentioning

confidence: 99%

Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping

2014

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“…Carrier doping by electrostatic gating or chemical substitution is an active field to modify electronic properties of nickelates [11][12][13][14][15] at the same time serving as a tool to understand and possibly control the metal insulator transition (MIT) phenomenon in nickelates. Earlier studies regarded nickelates as charge transfer insulators 16 whereas in recent works, the origin of insulating phase in nickelates has been attributed to charge disproportionation of the Ni site with an accompanying structural change from orthorhombic to monoclinic phase [17][18][19][20] .…”

Section: Introductionmentioning

confidence: 99%

Sign reversal of magnetoresistance in a perovskite nickelate by electron doping

et al. 2016

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We present low temperature resistivity and magnetotransport measurements conducted on pristine and electron doped SmNiO3 (SNO). The low temperature transport in both pristine and electrondoped SNO shows a Mott variable range hopping with a substantial decrease in localization length of carriers by one order in the case of doped samples. Un-doped SNO films show a negative magnetoresistance (MR) at all temperatures characterized by spin fluctuations with the evolution of a positive cusp at low temperatures. In striking contrast, upon electron doping of the films via hydrogenation, we observe a crossover to a linear non-saturating positive MR∼ 0.2 % at 50 K . The results signify the role of localization phenomena in tuning the magnetotransport response in doped nickelates. Ionic doping is therefore a promising approach to tune magnetotransport in correlated perovskites.

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“…8 The potential applications of these materials are wide-ranging, from sensors, optoelectronic switches to memory. 9,10 It is found that the MIT in nickelates could be tuned continuously by external electrical field. For example, via applying a static electric field on NdNiO 3 films with ionic liquid, the electric field induced shift of T MI results in a strong variation of the phase-dependent charge density.…”

Section: Introductionmentioning

confidence: 99%

DC current induced metal-insulator transition in epitaxial Sm0.6Nd0.4NiO3/LaAlO3 thin film

et al. 2014

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The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm0.6Nd0.4NiO3 (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO3 substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The TMI of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 109 A•m−2 to 4.9 × 109 A•m−2. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.

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A correlated nickelate synaptic transistor

Cited by 490 publications

References 62 publications

Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping

Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping

Sign reversal of magnetoresistance in a perovskite nickelate by electron doping

DC current induced metal-insulator transition in epitaxial Sm0.6Nd0.4NiO3/LaAlO3 thin film

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